TITLE

Compositional influence on sol-gel-derived amorphous oxide semiconductor thin film transistors

AUTHOR(S)
Dongjo Kim; Chang Young Koo; Keunkyu Song; Youngmin Jeong; Jooho Moon
PUB. DATE
September 2009
SOURCE
Applied Physics Letters;9/7/2009, Vol. 95 Issue 10, p103501
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We investigated the influence of the chemical compositions of gallium and indium cations on the performance of sol-gel-derived amorphous gallium indium zinc oxide (a-GIZO)-based thin film transistors (TFTs). A systematic compositional study allowed us to understand the solution-processed a-GIZO TFTs. We generated a compositional ternary diagram from which we could predict electrical parameters such as saturation mobility, threshold voltage, and the on/off current ratio as the constituent compositions varied. This diagram can be utilized for tailoring solution-processed amorphous oxide TFTs for specific applications.
ACCESSION #
44150707

 

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