TITLE

Amorphous carbon and carbon nitride bottom gate thin film transistors

AUTHOR(S)
Miyajima, Y.; Shkunov, M.; Silva, S. R. P.
PUB. DATE
September 2009
SOURCE
Applied Physics Letters;9/7/2009, Vol. 95 Issue 10, p102102
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Carbon based bottom gate thin film transistors were fabricated using pulsed laser deposited amorphous carbon (a-C) and amorphous carbon nitride (a-CNx) films. Both series of devices show p-type conduction in the active channel at high electric fields, for which the conduction mechanism may be fitted to Poole–Frenkel type behavior. The field effect mobilities were estimated to values of 2.5×10-3 cm2 V-1 S-1 at high fields. Nitrogen inclusion does not appear to affect the performance of the a-CNx at high fields since the current is postulated to be controlled by hole conduction states.
ACCESSION #
44150697

 

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