TITLE

Graphene on gallium arsenide: Engineering the visibility

AUTHOR(S)
Friedemann, M.; Pierz, K.; Stosch, R.; Ahlers, F. J.
PUB. DATE
September 2009
SOURCE
Applied Physics Letters;9/7/2009, Vol. 95 Issue 10, p102103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Graphene consists of single or few layers of crystalline ordered carbon atoms. Its visibility on oxidized silicon (Si/SiO2) enabled its discovery and spawned numerous studies of its unique electronic properties. The combination of graphene with the equally unique electronic material gallium arsenide (GaAs) has up to now lacked such easy visibility. Here we demonstrate that a deliberately tailored GaAs-aluminum arsenide (AlAs) multilayer structure makes graphene just as visible on GaAs as on Si/SiO2. We show that standard microscope images of exfoliated graphite on GaAs/AlAs suffice to identify mono-, bi-, and multilayers of graphene. Raman data confirm our results.
ACCESSION #
44150696

 

Related Articles

  • Computer simulation of Si-implanted GaAs (001) single crystals. Lee, Y. H.; Kang, T. W.; Hong, C. Y.; Kim, T. W. // Journal of Applied Physics;7/1/1992, Vol. 72 Issue 1, p229 

    Presents a study that investigated the silicon implantation efficiency, the silicon depth profile and the vacancy formation for silicon-implanted gallium arsenide crystals. Background on the implantation of impurity atoms in semiconductor materials; Discussion on the incident angle dependence...

  • Theoretical investigation of wave-vector-dependent analytical and numerical formulations of the interband impact-ionization transition rate for electrons in bulk silicon and GaAs. Kolník, Ján; Wang, Yang; Oğuzman, Ismail H.; Brennan, Kevin F. // Journal of Applied Physics;9/15/1994, Vol. 76 Issue 6, p3542 

    Deals with a study which incorporated the formulation of the impact-ionization transition rate of Quade and co-workers within an ensemble Monte Carlo simulator to determine the electron impact-ionization rate in bulk silicon and gallium arsenide. Model description; Results and conclusion.

  • graph·ite.  // American Heritage Student Science Dictionary;2009, p155 

    The entry provides information on graphite. It is a naturally occurring steelgray to black, crystalline form of carbon. The carbon atoms in graphite are strongly bonded together in sheets. Because the bonds between the sheets are weak, other atoms can easily fit between them, causing the...

  • Norway researchers grow semiconductors on graphene.  // Engineer (Online Edition);9/10/2012, p1 

    The article features the graphene-grown semiconductors created by Norwegian University of Science and Technology (NTNU) researchers, which according to them could be the new basis for future device systems. The gallium arsenide (GaAs) nanowires grown on graphene have been patented by the...

  • Theoretical study of hole initiated impact ionization in bulk silicon and GaAs using a wave-vector-dependent numerical transition rate formulation within an ensemble Monte Carlo calculation. Oğuzman, İsmail H.; Wang, Yang; Kolník, Ján; Brennan, Kevin F. // Journal of Applied Physics;1/1/1995, Vol. 77 Issue 1, p225 

    Presents a theoretical study of hole initiated impact ionization in bulk silicon and gallium arsenide (GaAs) using a wave-vector-dependent numerical transition rate formulation within an ensemble Monte Carlo calculation. Approaches for calculating ionization transition rates in bulk silicon and...

  • Free graphene films obtained from thermally expanded graphite. Dideikin, A.; Sokolov, V.; Sakseev, D.; Baidakova, M.; Vul’, A. // Technical Physics;Sep2010, Vol. 55 Issue 9, p1378 

    method of obtaining free graphene films using intercalation and subsequent thermal expansion of crystalline graphite is suggested. Thermally expanded graphite prepared by microwave irradiation is examined under a scanning electron microscope. It is found that it contains fragments of free...

  • The electronic property of graphene adsorbed on the siloxane and silanol surface structures of SiO2: A theoretical prediction. Yang, Chi-Jen; Huang, Shu-Jiuan; Kuo, Chin-Lung // Applied Physics Letters;12/17/2012, Vol. 101 Issue 25, p253107 

    Using density functional theory calculations, we have investigated the effect of specific surface structures on the electronic properties of a graphene layer on the SiO2 substrate. Our results show that graphene monolayer is weakly bound to the siloxane and silanol surfaces via the van der Waals...

  • The high-speed sliding friction of graphene and novel routes to persistent superlubricity. Yilun Liu; Grey, François; Quanshui Zheng // Scientific Reports;5/2/2014, p1 

    Recent experiments on microscopic graphite mesas demonstrate reproducible high-speed microscale superlubricity, even under ambient conditions. Here, we explore the same phenomenon on the nanoscale, by studying a graphene flake sliding on a graphite substrate, using molecular dynamics. We show...

  • Lattice thermal conductivity of graphene flakes: Comparison with bulk graphite. Nika, D. L.; Ghosh, S.; Pokatilov, E. P.; Balandin, A. A. // Applied Physics Letters;5/18/2009, Vol. 94 Issue 20, p203103 

    The authors proposed a simple model for the lattice thermal conductivity of graphene in the framework of Klemens approximation. The Gruneisen parameters were introduced separately for the longitudinal and transverse phonon branches through averaging over phonon modes obtained from the first...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics