Investigation on -c-InN and a-InN:Mg field effect transistors under electrolyte gate bias

Yen-Sheng Lu; Yuh-Hwa Chang; Yu-Liang Hong; Hong-Mao Lee; Shangjr Gwo; Yeh, J. Andrew
September 2009
Applied Physics Letters;9/7/2009, Vol. 95 Issue 10, p102104
Academic Journal
The electrical properties of N-polar undoped InN and nonpolar a-InN:Mg ion sensitive field effect transistors (ISFETs) have been investigated by electrolyte-gate-biased current-voltage (IDS-VGS) measurements. IDS-VGS characteristics reveal that the a-InN:Mg ISFETs have a large (∼52%) current variation ratio at a gate bias of 0.3 V with respect to the unbiased one, which is higher than that from the undoped InN ISFETs (∼18% and <0.1% for 10-nm and 1-μm-thick -c-InN epilayers, respectively). The a-InN:Mg ISFETs can also function as a pH sensor with a sensitivity of 56.5 mV/pH and a response time less than 10 s.


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