Subband transitions in dual-band n-B-n InAs/GaSb superlattice infrared photodetector identified by photoresponse spectra

Lee, S. J.; Noh, S. K.; Plis, E.; Krishna, S.; Lee, K.-S.
September 2009
Applied Physics Letters;9/7/2009, Vol. 95 Issue 10, p102106
Academic Journal
The subband transitions in dual-band n-B-n InAs/GaSb type-II superlattice infrared photodetector are identified by the photoresponse (PR) spectra. In the mid- and long-wavelength PR spectra measured by changing bias polarity, each spectrum individually shows a series of distinctive peaks related to the transitions from the hole subbands to the conduction one. The PR mechanism at each polarity is discussed in terms of diffusion and tunneling currents.


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