Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd2O3

Afana'ev, V. V.; Badylevich, M.; Stesmans, A.; Laha, A.; Osten, H. J.; Fissel, A.
September 2009
Applied Physics Letters;9/7/2009, Vol. 95 Issue 10, p102107
Academic Journal
Silicon nanocrystals embedded in a lattice-matched Gd2O3 matrix exhibit large size-dependent bandgap widening. Measurements of photocharging spectra of these crystals indicate only a marginal variation in the photoionization threshold energy. The latter suggests that most of the confinement-induced bandgap width variation is caused by the upward shift of the Si nanocrystal conduction band bottom.


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