Direct near-field optical investigation of phase-change medium in blue-ray recordable and erasable disk

Jen-You Chu; Shen-Chuan Lo; Shu-Chen Chen; You-Chia Chang; Juen-Kai Wang
September 2009
Applied Physics Letters;9/7/2009, Vol. 95 Issue 10, p103105
Academic Journal
The authors report a direct examination of recorded marks in blue-ray recordable and erasable disks with scattering-type scanning near-field optical microscopy. The optical contrasts of the crystalline and amorphous regions of the phase-change layer match with the prediction based on their optical constants. The determined spatial optical variation in the recorded marks reflects the intensity profile of the recording laser beam. The identified nanometer-sized optical features are shown to correspond to 10 nm-sized crystalline domains within the amorphous recorded marks. The revealed near-field signatures show a potential influence on the carrier-to-noise ratio of this optical storage medium.


Related Articles

  • Monolayer topography resolution achieved in a scanning near-field optical microscope. Plake, T.; Ramsteiner, M.; Grahn, H. T. // Review of Scientific Instruments;Dec2002, Vol. 73 Issue 12, p4250 

    A low-temperature scanning near-field optical microscope has been adapted to achieve a high topographical sensitivity. This setup allows us to resolve morphological features on semiconductor surfaces of monolayer height, which is demonstrated for two different material systems, monolayer steps...

  • Temperature dependence of optical constants for amorphous silicon. Nhan Do; Klees, Leander // Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2186 

    Examines the temperature dependence of the optical constants for amorphous silicon (a-Si). Performance of the extinction coefficient of a-Si with temperature in the strong absorption regime; Use of Mott-Davis formula; Determination of variation of the optical gap energy for a-Si; Comparison of...

  • Minimum detectable displacement in near-field scanning optical microscopy. Froehlich, Fred F.; Milster, Tom D. // Applied Physics Letters;10/31/1994, Vol. 65 Issue 18, p2254 

    Examines the near-field scanning optical microscopy. Use of a noncontact atomic shear force sensing scheme in optical microscopy probe-to-sample separation regulation; Basis of displacement measurement on focused laser beam diffraction scheme from vibrating probe; Role of the displacement in...

  • Growth and decay dynamics of a stable microbubble produced at the end of a near-field scanning optical microscopy fiber probe. Taylor, R. S.; Hnatovsky, C. // Journal of Applied Physics;6/15/2004, Vol. 95 Issue 12, p8444 

    Low power cw laser radiation coupled into a near-field scanning optical microscopy fiber probe has been used to generate a stable microbubble in water. A probe tip which was selectively chemically etched and metallized served as a microheater for the generation of the stable bubble. Bubble...

  • Investigation of the photoluminescence and modification of InGaP/GaAs/InGaAs heterostructures by near-field scanning microscopy. Gaponov, S. V.; Dryakhlushin, V. F.; Mironov, V. L.; Revin, D. G. // Technical Physics Letters;Aug97, Vol. 23 Issue 8, p624 

    This study deals with the local spectroscopy and modification of semiconducting InGaP/GaAs/ InGaAs quantum-well heterostructures by near-field scanning optical microscopy. The spatial distribution of the photoluminescence intensity in these structures is investigated and spatial nonuniformity of...

  • Contrast of microwave near-field microscopy. Knoll, B.; Keilmann, F. // Applied Physics Letters;5/19/1997, Vol. 70 Issue 20, p2667 

    Investigates the implication of constant-height scanning for the improvement of near-field microscopy. Advantages in using microwaves for the study; Analysis on the measured amplitude and phase images of conductive films; Details on the resolution limit of skin depth delta tip material.

  • A close look on single quantum dots. Zrenner, A. // Journal of Chemical Physics;5/8/2000, Vol. 112 Issue 18 

    Quantum dots, often referred to as artificial atoms, open the field of quantum resolved spectroscopy to semiconductor physics. The current article is designed to review the field of interband optical spectroscopy on single semiconductor quantum dots. © 2000 American Institute of Physics.

  • Optical Properties of Bi Doped Amorphous Se-Te Thin Films. Kumar, Anup; Heera, Pawan; Barman, P. B.; Sharma, Raman // AIP Conference Proceedings;12/12/2011, Vol. 1393 Issue 1, p329 

    Effect of Bismuth (Bi) doping on the optical constants of Se-Te thin films, prepared by thermal vacuum evaporation technique, is investigated using Swanepoel method. The optical constants i.e. refractive index (n), film thickness, absorption coefficient and optical energy gap are calculated from...

  • Luminescence efficiency enhancement in laser soaked hydrogenated amorphous carbon films. Koos, M.; Pocsik, I. // Applied Physics Letters;10/31/1994, Vol. 65 Issue 18, p2245 

    Examines the physical properties of hydrogenated amorphous carbon. Impact of laser beam exposure on photoluminescence intensity; Influence of carbon atom bonding on amorphous carbon layer behavior; Significance of light polarization preservation in electron hole pair localization; Implication...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics