TITLE

Piezoelectric nanoelectromechanical resonators based on aluminum nitride thin films

AUTHOR(S)
Karabalin, R. B.; Matheny, M. H.; Feng, X. L.; Defaÿ, E.; Le Rhun, G.; Marcoux, C.; Hentz, S.; Andreucci, P.; Roukes, M. L.
PUB. DATE
September 2009
SOURCE
Applied Physics Letters;9/7/2009, Vol. 95 Issue 10, p103111
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate piezoelectrically actuated, electrically tunable nanomechanical resonators based on multilayers containing a 100-nm-thin aluminum nitride (AlN) layer. Efficient piezoelectric actuation of very high frequency fundamental flexural modes up to ∼80 MHz is demonstrated at room temperature. Thermomechanical fluctuations of AlN cantilevers measured by optical interferometry enable calibration of the transduction responsivity and displacement sensitivities of the resonators. Measurements and analyses show that the 100 nm AlN layer employed has an excellent piezoelectric coefficient, d31=2.4 pm/V. Doubly clamped AlN beams exhibit significant frequency tuning behavior with applied dc voltage.
ACCESSION #
44150681

 

Related Articles

  • The extraordinary role of the AlN interlayer in growth of AlN sputtered on Ti electrodes. Tran, A. T.; Pandraud, G.; Tichelaar, F. D.; Nguyen, M. D.; Schellevis, H.; Sarro, P. M. // Applied Physics Letters;11/25/2013, Vol. 103 Issue 22, p221909 

    The structure of AlN layers grown on Ti with and without an AlN interlayer between the Si substrate and the Ti layer is investigated. The AlN grains take over the orientation of the Ti columnar grains in both cases. Surprisingly, the Ti grains do not take over completely the orientations of the...

  • Thin-film piezoelectric MEMS. Eom, Chang-Beom; Trolier-McKinstry, Susan // MRS Bulletin;Nov2012, Vol. 37 Issue 11, p1007 

    Major challenges have emerged as microelectromechanical systems (MEMS) move to smaller size and increased integration density, while requiring fast response and large motions. Continued scaling to nanoelectromechanical systems (NEMS) requires revolutionary advances in actuators, sensors, and...

  • Thin-film zero-group-velocity Lamb wave resonator. Yantchev, Ventsislav; Arapan, Lilia; Katardjiev, Ilia; Plessky, Victor // Applied Physics Letters;7/18/2011, Vol. 99 Issue 3, p033505 

    A concept for the development of thin film micro-acoustic resonators is demonstrated. The basic principles for the design and fabrication of zero-group-velocity Lamb acoustic wave resonators on c-textured thin aluminum nitride films are presented. The experimental results demonstrate that the...

  • Piezoelectric aluminum nitride thin films for microelectromechanical systems. Piazza, Gianluca; Felmetsger, Valeriy; Muralt, Paul; Olsson III, Roy H.; Ruby, Richard // MRS Bulletin;Nov2012, Vol. 37 Issue 11, p1051 

    This article reports on the state-of-the-art of the development of aluminum nitride (AlN) thin-film microelectromechanical systems (MEMS) with particular emphasis on acoustic devices for radio frequency (RF) signal processing. Examples of resonant devices are reviewed to highlight the...

  • Synthesis and characterization of 10nm thick piezoelectric AlN films with high c-axis orientation for miniaturized nanoelectromechanical devices. Zaghloul, Usama; Piazza, Gianluca // Applied Physics Letters;6/23/2014, Vol. 104 Issue 25, p1 

    The scaling of piezoelectric nanoelectromechanical systems (NEMS) is challenged by the synthesis of ultrathin and high quality piezoelectric films on very thin electrodes. We report the synthesis and characterization of the thinnest piezoelectric aluminum nitride (AlN) films (10nm) ever...

  • Electrical characterization of zinc oxide/aluminum nitride thin film precursor field effect transistor structures: A conducting atomic force microscopy and density functional theoretical study. Dey, Shirshendu; Jejurikar, Suhas; Bhattacharya, Somesh Kumar; Banerji, Anirban; Adhi, K. P.; Dharmadhikari, C. V. // Journal of Applied Physics;Nov2010, Vol. 108 Issue 9, p094510 

    Electrical transport across pulsed laser deposited zinc oxide (ZnO)/aluminum nitride (AlN)/Si(100) thin film structures has been studied using conducting atomic force microscopy. Current versus voltage spectroscopy performed on the samples with varying AlN layer thickness (t), revealed...

  • Linear variation of aluminum nitride capacitance versus voltage induced by a piezoelectric-electrostrictive coupling. Ben Hassine, Nizar; Mercier, Denis; Renaux, Philippe; Chappaz, Cédrick; Basrour, Skandar; Defay, Emmanuel // Journal of Applied Physics;Aug2008, Vol. 104 Issue 3, p034110 

    We report here the physical explanation of the unusual observed linear variation of AlN capacitance versus voltage bias: a third order coupling between piezoelectricity and electrostriction. A phenomenological model based on free energy consideration is proposed in order to implement the...

  • Ultrafast optical technique for measuring the electrical dependence of the elasticity of piezoelectric thin film: Demonstration on AlN. Devos, A.; Emery, P.; Defay, E.; Hassine, N. Ben; Parat, G. // Review of Scientific Instruments;Jan2013, Vol. 84 Issue 1, p015007 

    We present a technique based on ultrafast acoustics which permits us to measure the electrical dependence of the elastic properties of a thin piezoelectric layer. Ultrafast acoustics offers a unique way of measuring elastic properties of thin-layer in a non-destructive way using ultrashort...

  • Flexible Surface Acoustic Wave Device with AlN Film on Polymer Substrate. Jian Zhou; Shurong Dong; Hao Jin; Bing Feng; Demiao Wang // Journal of Control Science & Engineering;2012, Special section p1 

    Surface acoustic wave device with c-axis-oriented aluminum nitride (AlN) piezoelectric thin films on polymer substrates can be potentially used for development of flexible sensors, flexible microfluidic applications, microsystems, and lab-on-chip systems. In this work, the AlN films have been...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics