Piezoelectric nanoelectromechanical resonators based on aluminum nitride thin films

Karabalin, R. B.; Matheny, M. H.; Feng, X. L.; Defaÿ, E.; Le Rhun, G.; Marcoux, C.; Hentz, S.; Andreucci, P.; Roukes, M. L.
September 2009
Applied Physics Letters;9/7/2009, Vol. 95 Issue 10, p103111
Academic Journal
We demonstrate piezoelectrically actuated, electrically tunable nanomechanical resonators based on multilayers containing a 100-nm-thin aluminum nitride (AlN) layer. Efficient piezoelectric actuation of very high frequency fundamental flexural modes up to ∼80 MHz is demonstrated at room temperature. Thermomechanical fluctuations of AlN cantilevers measured by optical interferometry enable calibration of the transduction responsivity and displacement sensitivities of the resonators. Measurements and analyses show that the 100 nm AlN layer employed has an excellent piezoelectric coefficient, d31=2.4 pm/V. Doubly clamped AlN beams exhibit significant frequency tuning behavior with applied dc voltage.


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