TITLE

Light emitting ambipolar field-effect transistors of 2,5-bis(4-biphenyl)bithiophene single crystals with anisotropic carrier mobilities

AUTHOR(S)
Yan Wang; Kumashiro, Ryotaro; Zhaofei Li; Nouchi, Ryo; Tanigaki, Katsumi
PUB. DATE
September 2009
SOURCE
Applied Physics Letters;9/7/2009, Vol. 95 Issue 10, p103306
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ambipolar carrier injection is observed in organic field-effect transistors (FETs) based on 2,5-bis(4-biphenylyl)bithiophene single crystals. The device shows carrier mobilities of 0.04 and 0.02 cm2 V s for holes and electrons, respectively. Strong edge emission is observed, and the emission zone shifts upon the applied gate voltage. Hysteresis is found mainly in the ambipolar and electron-dominated regions. The electron mobility is significantly more sensitive to the transport direction than the hole mobility, suggesting that tuning the transport direction is very important to realize amplified spontaneous emission in organic FETs.
ACCESSION #
44150680

 

Related Articles

  • Investigation of defect-induced abnormal body current in fin field-effect-transistors. Kuan-Ju Liu; Ting-Chang Chang; Ching-En Chen; Ren-Ya Yang; Jyun-Yu Tsai; Ying-Hsin Lu; Xi-Wen Liu; Osbert Cheng; Cheng-Tung Huang // Applied Physics Letters;8/24/2015, Vol. 107 Issue 8, p1 

    This letter investigates the mechanism of abnormal body current at the linear region in n-channel high-k/metal gate stack fin field effect transistors. Unlike body current, which is generated by impact ionization at high drain voltages, abnormal body current was found to increase with decreasing...

  • Influence of the polymer dielectric characteristics on the performance of a quaterthiophene organic field-effect transistor. Unni, K.; Dabos-Seignon, Sylvie; Nunzi, Jean-Michel // Journal of Materials Science;Mar2006, Vol. 41 Issue 6, p1865 

    Organic field-effect transistors were fabricated with quaterthiophene as the active material and various polymeric dielectrics as the gate insulator. The conduction parameters such as mobility, threshold voltage, subthreshold swing, the maximum density of surface states etc. were found out. The...

  • InGaP/InGaAs doped-channel direct-coupled field-effect transistors logic with low supply voltage. Jung-Hui Tsai; Wen-Shiung Lour; Tzu-Yen Weng; Chien-Ming Li // Semiconductors;Feb2010, Vol. 44 Issue 2, p223 

    InGaP/InGaAs doped-channel direct-coupled field-effect transistor logic (DCFL) with relatively low supple voltage is demonstrated by two-dimensional analysis. In the integrated enhancement/depletion-mode transistors, subband and two-dimensional electron gas (2DEG) are formed in the InGaAs strain...

  • Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors. Tˇapajna, M.; Kaun, S. W.; Wong, M. H.; Gao, F.; Palacios, T.; Mishra, U. K.; Speck, J. S.; Kuball, M. // Applied Physics Letters;11/28/2011, Vol. 99 Issue 22, p223501 

    Early stage degradation of AlGaN/GaN high electron mobility transistors (HEMTs) with different threading dislocation densities (TDDs) submitted to off-state voltage bias stress was studied. It was found that, for the stress conditions used, HEMTs with TDD ∼1010 cm-2 show pronounced...

  • Channel-length scaling for effects of single defects in carbon nanotube transistors. Wang, Neng-Ping; Xu, Xiao-Jun // Journal of Applied Physics;Aug2013, Vol. 114 Issue 7, p073701 

    We investigate channel-length scaling characteristics for effects of a single charged defect in a carbon nanotube field-effect transistor (CNFET), using the nonequilibrium Greens function method. We find that the threshold voltage shift due to a single charge in midchannel increases with the...

  • Operation and properties of ambipolar organic heterostructure field-effect transistors. Lindner, Th.; Paasch, G.; Scheinert, S. // Journal of Applied Physics;1/1/2007, Vol. 101 Issue 1, p014502 

    In a recent article, we reported detailed numerical simulations for an ambipolar organic single-layer field-effect transistor (FET) with source and drain bottom contacts aimed to clarify basic ambipolar effects including both the actual contact properties and the recombination process [Paasch et...

  • A Verilog-A model of an undoped symmetric dual-gate MOSFET. Cobianu, O.; Soffke, O.; Glesner, M. // Advances in Radio Science;2006, Vol. 4, p303 

    We describe a new procedure of solving the electrostatic potentials in the silicon film of an undoped DG SOI MOSFET structure. Starting from a model previously described in the literature by Malobabic et al. (2004), we propose the bisection method for the solution of transcendental equation...

  • Design of a Low Voltage CMOS LNA at 2 GHz with Substrate-Bias. Wan Muhamad Hatta, S. F.; Soin, N. // AIP Conference Proceedings;11/6/2008, Vol. 1060 Issue 1, p244 

    A low-voltage (1.5V), 2 GHz cascode CMOS low noise amplifier (LNA) has been designed and simulated using Silvaco’s SMARTSPICE RF. The proposed design employs substrate bias of 0.5V and utilizes inductive source degeneration. This paper further presents an analysis on the effect of...

  • Ambipolar copper phthalocyanine heterojunction field effect transistors based organic inverter. Yadav, Sarita; Ghosh, Subhasis // AIP Conference Proceedings;Feb2013, Vol. 1512 Issue 1, p466 

    Stable ambipolar characteristic have been observed in F16CuPc/CuPc heterojunction based organic field effect transistor. These heterojunction devices show significant ambipolar charge transport with similar electron and hole mobilities. An electron mobility of 4.29×10-4 cm2V-1s-1 and hole...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics