Thermal stability of copper precipitates in silicon

McHugo, Scott A.; Flink, C.
November 2000
Applied Physics Letters;11/27/2000, Vol. 77 Issue 22
Academic Journal
The dissolution of copper precipitates in Czochralski silicon has been studied with synchrotron-based x-ray fluorescence. Copper has been introduced and allowed to precipitate at oxygen precipitates and growth-related stacking faults. The dissolution of copper precipitates is monitored after low-temperature anneals. This study is designed to determine whether copper can be released from these precipitation sites at low temperatures such that contamination and subsequent device degradation of an integrated circuit device could occur. Our results demonstrate copper dissolution back into the silicon matrix at temperatures as low as 360 °C. © 2000 American Institute of Physics.


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