Influence of crystal quality of underlying GaN buffer on the formation and optical properties of InGaN/GaN quantum dots

Davies, S. C.; Mowbray, D. J.; Wang, Q.; Ranalli, F.; Wang, T.
September 2009
Applied Physics Letters;9/7/2009, Vol. 95 Issue 10, p101909
Academic Journal
A study of InGaN quantum dots (QDs) grown on two different GaN templates—GaN growth using a conventional two-step approach and growth using our recently developed high temperature (HT) AlN as a buffer—is reported. The HT AlN buffer leads to a significant reduction in the dislocation density, particularly screw dislocations, in subsequently deposited GaN. This reduction is confirmed by a significant decrease in the (0002) x-ray diffraction rocking curve width. The GaN on the HT AlN buffer leads to a high density (1010/cm2) of InGaN QDs, whereas in contrast InGaN QDs on the conventional GaN layer grown using the two-step approach have a much smaller density (∼108/cm2). Furthermore, the carrier lifetimes for the QDs on the GaN/HT AlN have been found to be up to nine times longer than those for the QDs on the conventional GaN.


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