TITLE

Effect of inserted ultrathin barrier layer on luminescence of GaN/Al0.5Ga0.5N multiple quantum wells

AUTHOR(S)
Park, Young S.; Kang, Tae W.; Yongmin Kim; Hyunsik Im
PUB. DATE
September 2009
SOURCE
Applied Physics Letters;9/7/2009, Vol. 95 Issue 10, p101910
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report that luminescence properties in GaN/Al0.5Ga0.5N multiquantum wells (multi-QWs) are tailored by inserting an ultrathin Al0.5Ga0.5N layer (∼5 Å) in the middle of QWs. The inserted layer causes a dramatic redshift in photoluminescence and cathodeluminescence because of a huge piezoelectric polarization due to the additional strain along the growth direction. Quantitative analysis on the effects of the ultrathin inserted layer on the luminescence properties is performed using self-consistent Schrödinger–Poisson band profile calculations.
ACCESSION #
44150671

 

Related Articles

  • Optical probing of intermixing in GaAs-AlGaAs multiquantum wells. Seidel, W.; Lugagne-Delpon, E.; Voisin, P.; Rao, E. V. K.; Krauz, Ph.; Alexandre, F. // Journal of Applied Physics;8/15/1993, Vol. 74 Issue 4, p2968 

    Illustrates that a combination of low-temperature photoluminescence (PL) and luminescence excitation (PLE) spectroscopies together with appropriate modelization can provide the information needed for control of diffusion in quantum well structures. Sample used in the study; Data on the PL and...

  • Temperature quenching of exciton luminescence intensity in ZnO/(Mg,Zn)O multiple quantum wells. Makino, T.; Tamura, K.; Chia, C. H.; Segawa, Y.; Kawasaki, M.; Ohtomo, A.; Koinuma, H. // Journal of Applied Physics;5/15/2003, Vol. 93 Issue 10, p5929 

    The temperature-dependent behavior of excitonic photoluminescence observed in ZnO/MgZnO multiple quantum wells (MQWs) in the temperature range of 5-300 K is described. In a ZnO/Mg[SUB0.27]Zn[SUB0.73]O MQW grown by laser molecular-beam epitaxy, the luminescence was dominated by localized exciton...

  • Statistical analysis of recording light emitted by ZhS-19 glass. Tsaplev, Yu. B. // Optics & Spectroscopy;Feb2008, Vol. 104 Issue 2, p275 

    The statistical characteristics of light emitted by a radioluminescent source (ZhS-19 glass) and a light-emitting diode were obtained experimentally. The light recording in the photon counting mode was statistically analyzed. A conclusion was made that ZhS-19 glass is not a Poisson light source.

  • Time- and locally resolved photoluminescence of semipolar GaInN/GaN facet light emitting diodes. Wunderer, Thomas; Brückner, Peter; Hertkorn, Joachim; Scholz, Ferdinand; Beirne, Gareth J.; Jetter, Michael; Michler, Peter; Feneberg, Martin; Thonke, Klaus // Applied Physics Letters;4/23/2007, Vol. 90 Issue 17, p171123 

    The authors investigate the carrier lifetime and photoluminescence (PL) intensity of a semipolar GaInN/GaN sample which was realized by growing five GaInN/GaN quantum wells on the {1101} side facets of selectively grown n-GaN stripes that have a triangular shape running...

  • Photoluminescence study of interface defects in high-quality GaAs-GaAlAs superlattices. Deveaud, B.; Regreny, A.; Emery, J-Y.; Chomette, A. // Journal of Applied Physics;3/1/1986, Vol. 59 Issue 5, p1633 

    Examines a series of high-quality molecular beam epitaxy grown multiple quantum well and superlattice structures using luminescence and luiminescence excitation spectroscopy. Information on luminescence studies at various powers and temperatures; Description of the photoluminescence spectra;...

  • Multiple-phonon relaxation in GaAs-AlGaAs quantum well dots. Wang, P. D.; Sotomayor Torres, C. M. // Journal of Applied Physics;10/15/1993, Vol. 74 Issue 8, p5047 

    Presents the resonant Raman scattering and hot exciton luminescence from dry etched gallium-arsenic-aluminum-gallium-arsenic quantum dots. Use of photoluminescence and photoluminescence excitation; Discussion on the lateral patterning of quantum wells; Information on the quantum dots and wires...

  • Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells. Craven, M. D.; Waltereit, P.; Speck, J. S.; DenBaars, S. P. // Applied Physics Letters;1/26/2004, Vol. 84 Issue 4, p496 

    This work investigates the room-temperature photoluminescence (PL) characteristics of nonpolar GaN/(∼100 Å Al[sub 0.16]Ga[sub 0.84]N) multiple quantum wells (MQWs) in comparison to c-plane structures as a function of GaN quantum well width. 10-period a-plane and c-plane MQW structures...

  • Analysis of the photoluminescence spectra of CdHgte heteroepitaxial structures with potential and quantum wells grown by molecularbeam epitaxy. Voitsekhovskii, A.; Gorn, D.; Izhnin, I.; Izhnin, A.; Goldin, V.; Mikhailov, N.; Dvoretskii, S.; Sidorov, Yu.; Yakushev, M.; Varavin, V. // Russian Physics Journal;Jan2013, Vol. 55 Issue 8, p910 

    A theoretical model for description of the band diagram and the photoluminescence spectra of heteroepitaxial structures (HES) based on CdHgTe (MCT) with potential and quantum wells (QW) grown by molecularbeam epitaxy (MBE) is developed. A special feature of the model is that the model takes into...

  • Type-II interband transition of ZnS0.78Te0.22/ZnTe single quantum wells. Jae Ho Bahng; Moon, S.J.; Lee, K.H.; Choi, J.C.; Jeong, K.; Park, H.L. // Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3870 

    Optical properties of ZnS0.78Te0.22/ZnTe single quantum wells grown on GaAs (100) substrates by hot wall epitaxy technique with varying the ZnS0.78Te0.22 well width from 0.3 to 1.8 nm were investigated by photoluminescence (PL) measurements at low temperature and by temperature-dependent PL...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics