Effect of inserted ultrathin barrier layer on luminescence of GaN/Al0.5Ga0.5N multiple quantum wells

Park, Young S.; Kang, Tae W.; Yongmin Kim; Hyunsik Im
September 2009
Applied Physics Letters;9/7/2009, Vol. 95 Issue 10, p101910
Academic Journal
We report that luminescence properties in GaN/Al0.5Ga0.5N multiquantum wells (multi-QWs) are tailored by inserting an ultrathin Al0.5Ga0.5N layer (∼5 Å) in the middle of QWs. The inserted layer causes a dramatic redshift in photoluminescence and cathodeluminescence because of a huge piezoelectric polarization due to the additional strain along the growth direction. Quantitative analysis on the effects of the ultrathin inserted layer on the luminescence properties is performed using self-consistent Schrödinger–Poisson band profile calculations.


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