TITLE

Intrinsic and boron-enhanced hydrogen diffusion in amorphous silicon formed by ion implantation

AUTHOR(S)
Johnson, B. C.; McCallum, J. C.; Atanacio, A. J.; Prince, K. E.
PUB. DATE
September 2009
SOURCE
Applied Physics Letters;9/7/2009, Vol. 95 Issue 10, p101911
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The concentration dependence of H diffusion in amorphous Si (a-Si) formed by ion implantation is reported for implanted H profiles. An empirical relationship is proposed which relates the diffusion coefficient to the H concentration valid up to 0.3 at. %. B-enhanced H diffusion is observed and shows trends with temperature typically associated with a Fermi level shifting dependence. A modified form of the generalized Fermi level shifting model is applied to these data.
ACCESSION #
44150670

 

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