An organic charge trapping memory transistor with bottom source and drain contacts

Debucquoy, Maarten; Bode, Dieter; Genoe, Jan; Gelinck, Gerwin H.; Heremans, Paul
September 2009
Applied Physics Letters;9/7/2009, Vol. 95 Issue 10, p103311
Academic Journal
We present an organic charge trapping memory transistor with lithographically defined bottom source and drain contacts. This device can be written and erased at voltages as low as 15 V. More than 500 write and erase cycles and the retention of the trapped charge over more than three months are shown, demonstrating the possibilities of this device as a reprogramable nonvolatile organic memory element.


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