Nanoscale band gap spectroscopy on ZnO and GaN-based compounds with a monochromated electron microscope

Bosman, M.; Tang, L. J.; Ye, J. D.; Tan, S. T.; Zhang, Y.; Keast, V. J.
September 2009
Applied Physics Letters;9/7/2009, Vol. 95 Issue 10, p101110
Academic Journal
Monochromated low-loss EELS (electron energy-loss spectroscopy) is explored as an analytical technique for nanoscale mapping of the electronic band gap energy on arsenic-implanted ZnO, CdZnO, and InGaN compounds. Its accuracy is confirmed independently with Raman spectroscopy. From a ternary compound, the relationship between the band gap energy and the chemical composition is determined, a powerful application of low-loss EELS. The effects of electron beam delocalization are discussed using examples from In0.25Ga0.75N quantum wells.


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