Self-pulsing 1050 nm quantum dot edge emitting laser diodes

Haoling Liu; Smowton, Peter; Summers, Huw; Edwards, Gareth; Drexler, Wolfgang
September 2009
Applied Physics Letters;9/7/2009, Vol. 95 Issue 10, p101111
Academic Journal
We examine self-pulsing, edge emitting, quantum dot laser diodes as continuous broad spectrum light sources emitting at ∼1050 nm. Devices are configured with split contacts. When operated without a saturable absorber, the laser emits a number of discrete narrow modes, which merge to form a broad continuous lasing spectrum on application of the saturable absorber. The broadened spectra are consistent with the modulated carrier density expected under Q-switched operation. This provides a simple technique for generating emission suitable for biomedical applications. The spectral width achieved is ∼10 nm, and the average output power is 7.5 mW.


Related Articles

  • Three-dimensional wavelength-scale confinement in quantum dot microcavity light-emitting diodes. Zinoni, C.; Alloing, B.; Paranthoën, C.; Fiore, A. // Applied Physics Letters;9/20/2004, Vol. 85 Issue 12, p2178 

    We introduce a microcavity light-emitting diode (LED) structure that uses submicrometer oxide aperture and a quantum dot active region to achieve strong three-dimensional confinement of both the carrier distribution and the optical field. Light—current curves show optical emission for...

  • Beyond quantum dot LEDs: Optical gain and laser action in red, green, and blue colors. Dang, Cuong; Nurmikko, Arto // MRS Bulletin;Sep2013, Vol. 38 Issue 9, p737 

    State-of-the-art colloidal quantum dots (CQDs) exhibit excellent properties as pure color red, green, and blue (RGB) phosphors for light-emitting applications ranging from solid-state lighting to flat panel displays. Progress in controlling the chemical synthesis of II–VI semiconductor...

  • Lasing in high-Q quantum-dot micropillar cavities. Reitzenstein, S.; Bazhenov, A.; Gorbunov, A.; Hofmann, C.; Münch, S.; Löffler, A.; Kamp, M.; Reithmaier, J. P.; Kulakovskii, V. D.; Forchel, A. // Applied Physics Letters;7/31/2006, Vol. 89 Issue 5, p051107 

    We present lasing in optically pumped high-Q micropillar cavity lasers with low thresholds and high β factors. The micropillar cavities with diameters between 1.0 and 4.0 μm contain a single layer of low density In0.3Ga0.7As quantum dots as active region. Cavity Q factors of up to 23.000...

  • Lasers make quantum wells 'cool'. Coffey, Valerie C. // Laser Focus World;Aug2008, Vol. 44 Issue 8, p52 

    The article focuses on the utilization of laser light to cool a semiconductor material. With a photoluminescence up-conversion, the German researchers examined how the laser-induced photoluminescence cooling of semiconductor quantum wells (QWs) altered over a range of sample temperatures....

  • Quantum-dot laser diode design optimized to reach the maximum power conversion efficiency. Zhukov, A. E.; Maximov, M. V.; Krasivichev, A. A. // Technical Physics Letters;May2009, Vol. 35 Issue 5, p425 

    A model is developed that allows the design of lasers based on multilayer quantum dot (QD) arrays to be optimized so as to reach the maximum conversion efficiency at a preset optical output power level. It is shown that, for the present-day state of the art in QD lasers for the 1.2–1.3...

  • A single-spatial-mode semiconductor laser based on InAs/InGaAs quantum dots with a diffraction filter of optical modes. Gordeev, N. Yu.; Novikov, I. I.; Kuznetsov, A. M.; Shernyakov, Yu. M.; Maximov, M. V.; Zhukov, A. E.; Chunareva, A. V.; Payusov, A. S.; Livshits, D. A.; Kovsh, A. R. // Semiconductors;Oct2010, Vol. 44 Issue 10, p1357 

    The concept of a diffraction optical filter is used for prevention of high-order mode oscillation in a design of stripe laser diodes with an active region based on InAs/InGaAs quantum dots emitting in the 1.3-�m wavelength range grown on GaAs substrates. Incorporation of such a filter made...

  • Ultraviolet light-emitting diodes with self-assembled InGaN quantum dots. Park, Il-Kyu; Kwon, Min-Ki; Seo, Seong-Bum; Kim, Ja-Yeon; Lim, Jae-Hong; Park, Seong-Ju // Applied Physics Letters;3/12/2007, Vol. 90 Issue 11, p111116 

    A photoluminescence study showed that the self-assembled InGaN quantum dots (QDs) provide strongly localized recombination sites for carriers and that the piezoelectric field-induced quantum-confined Stark effect (QCSE) is small because the height of QDs is too small to separate the wave...

  • Photoluminescence and photostability investigations of biocompatible semiconductor nanocrystals coated with glutathione using low laser power. Ibrahim, Salwa; Ahmed, Wafaa; Youssef, Tareq // Journal of Nanoparticle Research;Jun2014, Vol. 16 Issue 6, p1 

    Great efforts are currently devoted to fabricate high-quality quantum dots (QDs) in aqueous solutions for biomedical applications. Two biocompatible systems consisting of core (CdSe) and core/shell (CdSe/ZnS) QDs surface modified with glutathione (GSH), named CdSe-GSH and CdSe/ZnS-GSH,...

  • Vertical integration of ultrafast semiconductor lasers. Maas, D. J. H. C.; Bellancourt, A.-R.; Rudin, B.; Golling, M.; Unold, H. J.; Südmeyer, T.; Keller, U. // Applied Physics B: Lasers & Optics;Sep2007, Vol. 88 Issue 4, p493 

    Lasers generating short pulses – referred to as ultrafast lasers – enable many applications in science and technology. Numerous laboratory experiments have confirmed that ultrafast lasers can significantly increase telecommunication data rates [1], improve computer interconnects,...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics