TITLE

Increased electrical activation in the near-surface region of sulfur and nitrogen coimplanted GaAs

AUTHOR(S)
Yu, K. M.; Yu, K.M.; Walukiewicz, W.; Shan, W.; Wu, J.; Beeman, J. W.; Beeman, J.W.; Ager, J. W.; Ager III, J.W.; Haller, E. E.; Haller, E.E.
PUB. DATE
November 2000
SOURCE
Applied Physics Letters;11/27/2000, Vol. 77 Issue 22
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A large increase in the electrical activation of sulfur coimplanted with nitrogen in GaAs is observed within a thin (<500 Å) near-surface region. A free electron concentration as high as 1.5x10[sup 19] cm-3 is observed in this layer, which is a factor of 5 higher than in a GaAs sample implanted with S only. The high free electron concentration in this thin layer is the result of the incorporation of N on the As site which forms a thin dilute GaN[sub x]As[sub 1-x] alloy layer. The increased electrical activity of S in this layer is explained by the N-induced modifications of the conduction band as predicted by the band anticrossing model. The measured free electron concentration is consistent with a GaN[sub x]As[sub 1-x] alloy layer with x∼0.3%. The results have important practical implications on the fabrication of low-resistance, nonalloyed ohmic contacts to n-type GaAs. © 2000 American Institute of Physics.
ACCESSION #
4415065

 

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