Quasipersistent change in Hall sensitivity after illumination

Schurig, E.; Besse, P.-A.; Manic, D.; Popovic, R. S.; Popovic, R.S.
November 2000
Applied Physics Letters;11/27/2000, Vol. 77 Issue 22
Academic Journal
A quasipersistent change in the magnetic sensitivity of nonplate-like Hall sensors after light exposure has been discovered. The recovery time constant is about 10 min. The observed effect is very similar to the persistent photoconductivity (PPC) which has been described some time ago in silicon bulk material. Surprisingly, the new effect is about 1 order of magnitude stronger than the PPC. The similar recovery behavior of both effects suggests a common origin in precipitated oxygen clusters in the active zone. The amplitude of the variations is highly dependent on the cluster concentration in the substrate. The presented Hall sensors give a sensitive means to characterize the oxygen-denuded zone in Czochralski wafers. © 2000 American Institute of Physics.


Related Articles

  • Study of photoconductivity in AlxGa1-xAs/GaAs modulation-doped heterostructures. Peng, Zhongling; Saku, Tadashi; Horikoshi, Yoshiji // Journal of Applied Physics;4/1/1996, Vol. 79 Issue 7, p3592 

    Presents a study which examined the photoconductivity of AlGaAs/gallium arsenide modulation-doped heterostructures by temperature-variable Hall effect measurement. Background on the sample material; Details on the experimental setup; Results.

  • Persistent photoconductivity in Ga[sub 1-x]In[sub x]N[sub y]As[sub 1-y]. Li, J.Z.; Lin, J.Y.; Jiang, H.X.; Geisz, J.F.; Kurtz, Sarah R. // Applied Physics Letters;9/27/1999, Vol. 75 Issue 13, p1899 

    Investigates the electrical properties of unintentionally doped quarternary alloys grown by metal-organic vapor-phase epitaxy, using the Hall effect and photoconductivity (PPC) measurements. Observed persistent PPC; Systematic measurement of PPC buildup and decay kinetics at different...

  • Anisotropic Multicomponent Terahertz Photoconductivity in Quantum Hall Systems. Kalugin, N. G.; Vasil’ev, Yu. B.; Suchalkin, S. D.; Nachtwei, G.; Sagol, B. E.; Hein, G.; Eberl, K. // JETP Letters;11/25/2002, Vol. 76 Issue 10, p625 

    The decay times of the terahertz photoconductivity signal are studied for samples in the quantum Hall regime. The photoconductivity signal has both the longitudinal components caused by the photoinduced change in the longitudinal resistance and the transverse components due to the photoinduced...

  • Transport and persistent photoconductivity in InGaAs/InP single quantum wells. Anderson, D. A.; Bass, S. J.; Kane, M. J.; Taylor, L. L. // Applied Physics Letters;11/17/1986, Vol. 49 Issue 20, p1360 

    Hall effect and Shubnikov–de Haas data are presented for single 100 Å InGaAs/InP quantum wells grown by atmospheric pressure metalorganic chemical vapor deposition. Both modulation doped and nominally undoped structures are studied. Measurements are made on the latter structures by...

  • Decay kinetics of photoconductivity of PbSnTe doped with indium. Martinez, Antonio; Santiago, Francisco; Davis, John L.; Houston, Bland; Drew, H. D. // Journal of Applied Physics;12/15/1985, Vol. 58 Issue 12, p4618 

    Discusses the temporal decay of persistent photoconductivity in PbSnTe films doped with indium. Activation energy in the limit of low carrier densities; Kinetics of persistent photoconductivity; Effect of illumination conditions on the Hall mobility of the sample.

  • Pressure dependence of electron transport in InP. Patel, D.; Sites, J. R.; Spain, I. L. // Applied Physics Letters;6/22/1987, Vol. 50 Issue 25, p1829 

    Photoconductivity and Hall measurements in InP are presented for pressures up to 4 GPa using a diamond anvil cell. The application of pressure increases the direct energy band gap (E0), as seen by the shift of the photoconductivity edge to lower wavelength with increasing pressure. Hall...

  • THz-Photoconductivity of Quantum Hall Systems in Quasi-Corbino-Geometry. Notthoff, C.; Lorke, A.; Rachor, K.; Heitmann, D.; Reuter, D. // Journal of Low Temperature Physics;Apr2010, Vol. 159 Issue 1/2, p193 

    The THz-photoresponse (PR) between two separately contacted edge-channels of a two-dimensional electron gas in the quantum Hall regime is investigated. We use a not-simply-connected sample geometry, which is topologically equivalent to a ring shape (Corbino-geometry). At filling factors ?<2,...

  • Photoconductivity of a modulation-doped GaAs/AlGaAs heterostructure induced by fast neutron irradiation. Wu, Yong-sheng; Huang, Yi; Li, Yong-kang; Yang, Zhong-xing; Zhou, Jun-ming // Journal of Applied Physics;3/15/1988, Vol. 63 Issue 6, p2154 

    Examines the Shubnikov-de Haas oscillation and quantum Hall effect on a modulation-doped gallium arsenide/aluminum gallium arsenide (GaAs/AlGaAS) heterostructure. Contribution of GaAs layer to the persistent photoconductivity effect (PPC); Determination of the defects responsible for the PPC...

  • Effect of pressure on the transport properties of (In, Ga)As. Patel, D.; Spain, I. L. // Journal of Applied Physics;9/1/1988, Vol. 64 Issue 5, p2790 

    Presents results of room-temperature photoconductivity and Hall measurements on (indium (In), gallium (Ga))arsenide. Purpose of Hall measurements; Effect of pressure on the electron mobility of liquid phase epitaxy (In, Ga)As/indium phosphide; Parameters used in calculating the theoretical curves.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics