TITLE

Photovoltaic properties of CuGaSe[sub 2] homodiodes

AUTHOR(S)
Scho¨n, J. H.; Klenk, M.; Schenker, O.; Bucher, E.
PUB. DATE
November 2000
SOURCE
Applied Physics Letters;11/27/2000, Vol. 77 Issue 22
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
CuGaSe[sub 2]-homodiodes were prepared by diffusion of Sb into n-type material. Total area solar energy conversion efficiencies up to 9.4% were obtained for standard solar illumination (air mass 1.5/AM1.5). Moreover, the analysis of illuminated and dark current-voltage characteristics revealed reduced recombination losses compared to conventional ZnO/CdS/CuGaSe[sub 2] diodes, leading to filling factors exceeding 70%. Hence, the use of homodiodes is very promising for efficient solar energy conversion in wide-band-gap Cu-III-VI[sub 2] chalcopyrites. © 2000 American Institute of Physics.
ACCESSION #
4415048

 

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