TITLE

Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

AUTHOR(S)
Chung, G. Y.; Chung, G.Y.; Tin, C. C.; Tin, C.C.; Williams, J. R.; Williams, J.R.; McDonald, K.; Di Ventra, M.; Pantelides, S. T.; Pantelides, S.T.; Feldman, L. C.; Feldman, L.C.; Weller, R. A.; Weller, R.A.
PUB. DATE
March 2000
SOURCE
Applied Physics Letters;3/27/2000, Vol. 76 Issue 13
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Results of capacitance-voltage measurements are reported for metal-oxide-semiconductor capacitors fabricated using the 4H polytype of silicon carbide doped with either nitrogen (n) or aluminum (p). Annealing in nitric oxide after a standard oxidation/reoxidation process results in a slight increase in the defect state density in the lower portion of the band gap for p-SiC and a significant decrease in the density of states in the upper half of the gap for n-SiC. Theoretical calculations provide an explanation for these results in terms of N passivating C and C clusters at the oxide-semiconductor interface. © 2000 American Institute of Physics.
ACCESSION #
4415019

 

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