TITLE

Heterogeneously integrated organic light-emitting diodes with complementary metal-oxide-silicon circuitry

AUTHOR(S)
Mathine, D. L.; Mathine, D.L.; Woo, H. S.; Woo, H.S.; He, W.; Kim, T. W.; Kim, T.W.; Kippelen, B.; Peyghambarian, N.
PUB. DATE
June 2000
SOURCE
Applied Physics Letters;6/26/2000, Vol. 76 Issue 26
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Top-emitting arrays of organic light-emitting diodes (OLEDs) have been fabricated and demonstrated on complementary metal-oxide-silicon (CMOS) circuitry. The 8x8 array of OLEDs is composed of 90 μm micropixels with a 55 μm separation. The OLEDs are based on an emitting layer of tris-(8-hydroxyquinoline)aluminum (Alq[sub 3]) doped with coumarin 6 to provide green light emission. A layer of N,N[sup ′]-diphenyl-N, N[sup ′]-bis(3-methylphenyl)1-1[sup ′]-biphenyl 1-4, 4[sup ′]-diamine (TPD) was used as a hole transport layer and poly(ethylenedioxythiophene) doped with polystyrenesulfonate was used as a buffer layer between the TPD and the CMOS anode metal. Bright light was emitted through a semitransparent Mg:Ag cathode when the micropixel was driven by an individual current source. © 2000 American Institute of Physics.
ACCESSION #
4414995

 

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