Comparison of excited nitrogen sources for molecular-beam-epitaxy GaN growth: Radio frequency and electron cyclotron resonance plasma sources

Cho, Sung-Hwan; Sung-Hwan Cho; Okumura, Hajime; Akimoto, Katsuhiro
June 2000
Applied Physics Letters;6/26/2000, Vol. 76 Issue 26
Academic Journal
A comparative study of electron cyclotron resonance (ECR) and radio frequency (rf) plasma as a nitrogen source for molecular-beam epitaxy GaN was carried out. The effects of differences in the excited nitrogen species on the optical signals during GaN growth were investigated by 77 K photoluminescence (PL). For epitaxial layers grown at optimum V/III ratio using ECR and rf plasma, the PL spectra were dominated by near band-edge emission at 3.47 eV. However, when the V/III ratio was less than the optimum V/III ratio, a broad emission band at about 3.2-3.3 eV was observed in the PL spectrum for the GaN epilayer grown using rf plasma, while in the case of growth using ECR plasma, a deep level emission at about 2.2 eV appeared. These characteristics in PL spectra can used to identify differences in the chemical species in the nitrogen plasma. © 2000 American Institute of Physics.


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