TITLE

Channeling as a mechanism for dry etch damage in GaN

AUTHOR(S)
Haberer, Elaine D.; Chen, Ching-Hui; Ching-Hui Chen; Abare, Amber; Hansen, Monica; Denbaars, Steve; Coldren, Larry; Mishra, Umesh; Hu, Evelyn L.
PUB. DATE
June 2000
SOURCE
Applied Physics Letters;6/26/2000, Vol. 76 Issue 26
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Etch damage of GaN was investigated using a quantum-well probe structure. A clear decrease in photoluminescence (PL) intensity was observed and was aggravated with increasing ion-beam voltage. The magnitude of decrease in PL intensity was much larger than expected, even greater than for GaAs subjected to similar etch conditions. Angle-dependent bombardment studies were carried out to investigate channeling as a damage mechanism in GaN. The large decrease in PL intensity observed near normal incidence or along the [0001] direction suggests that channeling is a damage mechanism for low-energy bombardment in GaN. © 2000 American Institute of Physics.
ACCESSION #
4414962

 

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics