Self-assembled growth of epitaxial erbium disilicide nanowires on silicon (001)

Chen, Yong; Yong Chen; Ohlberg, Douglas A. A.; Ohlberg, Douglas A.A.; Medeiros-Ribeiro, Gilberto; Chang, Y. Austin; Williams, R. Stanley
June 2000
Applied Physics Letters;6/26/2000, Vol. 76 Issue 26
Academic Journal
By choosing a material that has an appropriate asymmetric lattice mismatch to the host substrate, in this case ErSi[sub 2] on Si(001), it is possible to grow one-dimensional epitaxial crystals. ErSi[sub 2] nanowires are less than one nanometer high, a few nanometers wide, close to a micron long, crystallographically aligned to <110>[sub Si] directions, straight, and atomically regular. © 2000 American Institute of Physics.


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