TITLE

All selective metalorganic vapor phase epitaxy grown buried-heterostructure laser diodes with selectively oxidized AlInAs current-confinement layer

AUTHOR(S)
Ko, Hyun-Chul; Hyun-Chul Ko; Nakamura, Takahiro; Koui, Tomoaki; Suzuki, Naofumi; Shiba, Kazuhiro; Kobayashi, Kenichi
PUB. DATE
September 2000
SOURCE
Applied Physics Letters;9/25/2000, Vol. 77 Issue 13
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A laser diode structure, consisting of a 1.3 μm all selective metalorganic vapor phase epitaxy grown buried-heterostructure (ASM-BH) laser diode with a selectively oxidized-AlInAs current-confinement layer, is proposed and demonstrated. As the lateral oxidization is automatically stopped near the active layer by self-aligned AlInAs, a narrow current aperture with excellent controllability is realized. The fabricated laser diode shows low continuous-wave threshold current of 2.5 and 7.5 mA at 25 and 85 °C, respectively, for 250-μm-long devices with HR(75%)/HR(95%) coatings. The maximum operating temperature is higher than 145 °C. © 2000 American Institute of Physics.
ACCESSION #
4414933

 

Related Articles

  • P-i-n HgCdTe photodiodes grown by molecular beam epitaxy. Arias, J. M.; Zandian, M. // Applied Physics Letters;6/17/1991, Vol. 58 Issue 24, p2806 

    Reports on the successful molecular beam epitaxy growth of in situ arsenic- and indium-doped p-i-n HgCdTe double heterostructures. Fabrication of high-performance, short-wavelength, infrared photodiodes operating at 300 K; Current-voltage characteristics and quantum efficiency of the diodes.

  • Vertical-cavity surface-emitting laser diodes fabricated by phase-locked epitaxy. Walker, J.D.; Kuchta, D.M.; Smith, J.S. // Applied Physics Letters;10/21/1991, Vol. 59 Issue 17, p2079 

    Examines the fabrication of vertical-cavity surface-emitting laser diodes by phase-locked epitaxy. Details on the threshold voltage and series resistance of the diodes; Absence of heat sink in the diodes; Correlation between threshold voltage and electrical power of the devices.

  • High-power, high-efficiency 1.3 μm superluminescent diode with a buried bent absorbing guide structure. Nagai, Haruo; Noguchi, Yoshio; Sudo, Shoichi // Applied Physics Letters;5/1/1989, Vol. 54 Issue 18, p1719 

    A superluminescent diode (SLD) operating in the 1.3 μm wavelength region has been fabricated by the liquid phase epitaxial growth technique. Lasing is effectively suppressed by incorporating an unpumped buried bent guide structure for SLD operation. Devices with an antireflection coating on...

  • Investigation of the parameters of deep centers in n-6HSiC epitaxial layers obtained by gas-phase epitaxy. Lebedev, A. A.; Davydov, D. V. // Semiconductors;Sep97, Vol. 31 Issue 9, p896 

    Epitaxial layers of 6H-SiC obtained by gas-phase epitaxy have been investigated by capacitance spectroscopy methods. It is shown that deep centers are present in the test samples. Such centers were previously observed in SiC epitaxial layers obtained by sublimation epitaxy. However, the total...

  • Estimation of trap levels in SrTiO[sub 3] epitaxial films from measurement of (LaSr)MnO[sub 3]/SrTiO[sub 3]/(LaSr)TiO[sub 3] p-i-n diode characteristics. Sugiura, Masanori; Uragou, Kazuyuki; Tachiki, Minoru; Kobayashi, Takeshi // Journal of Applied Physics;7/1/2001, Vol. 90 Issue 1, p187 

    We have explored electrical trap levels inside SrTiO[sub 3] epitaxial films grown by the pulsed laser deposition method from electrical measurements of semiconducting oxide p-i-n diodes consisting of La[sub 0.85]Sr[sub 0.15]MnO[sub 3]/SrTiO[sub 3]/La[sub 0.05]Sr[sub 0.95]TiO[sub 3] trilayers....

  • AlGaAs/GaAs melt-etched inner stripe laser diode with self-aligned structure. Watanabe, A.; Yamada, T.; Imanaka, K.; Horikawa, H.; Kawai, Y.; Sakuta, M. // Applied Physics Letters;6/1/1985, Vol. 46 Issue 11, p1023 

    A novel liquid phase epitaxy (LPE) used to fabricate a channeled stripe AlGaAs/GaAs laser diode emitting at 780 nm with a self-aligned structure is reported. In the present method, only two-step LPE and a conventional wet chemical etching are required. The inner stripe, 4 μm wide, is grooved...

  • Evidence for bias dependent barrier heights in gold-epitaxial CdTe Schottky diodes. Sands, D.; Scott, C. G. // Journal of Applied Physics;4/1/1995, Vol. 77 Issue 7, p3295 

    Presents a study that measured the forward bias and reverse bias current-voltage characteristics of gold-epitaxial CdTe-on-InSb Schottky diodes at room temperature. Experimental details; Results; Discussion.

  • 1.7�1.8�m Diode Lasers Based on Quantum-Well InGaAsP/InP Heterostructures. Lyutetski&ibreve;, A. V.; Pikhtin, N. A.; Slipchenko, S. O.; Sokolova, Z. N.; Fetisova, N. V.; Leshko, A. Yu.; Shamakhov, V. V.; Andreev, A. Yu.; Golikova, E. G.; Ryaboshtan, Yu. A.; Tarasov, I. S. // Semiconductors;Nov2003, Vol. 37 Issue 11, p1356 

    Separate-confinement InGaAsP/InP heterostructures with highly strained quantum wells are grown by metal�organic vapor-phase epitaxy (MOVPE). The properties of InGaAsP and InGaAs quantum wells are studied, and the influence of the heterostructure parameters on the lasing wavelength is...

  • Monolithic integration of a light-emitting diode array and a silicon circuit using transfer.... Dingle, B.D.; Spitzer, M.B.; McClelland, R.W.; Fan, J.C.C.; Zavracky, P.M. // Applied Physics Letters;5/31/1993, Vol. 62 Issue 22, p2760 

    Examines an integrated light-emitting diode array on a silicon circuit via transfer processes. Transmission of emitters on lattice-matched substrate to silicon; Formation of substrates through epitaxy; Application of the chemical epitaxial lift-off in eradicating an array from the substrate.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics