Piezoelectric-induced quantum-confined Stark effect in self-assembled InAs quantum dots grown on (N11) GaAs substrates

Sanguinetti, S.; Gurioli, M.; Grilli, E.; Guzzi, M.; Henini, M.
September 2000
Applied Physics Letters;9/25/2000, Vol. 77 Issue 13
Academic Journal
We investigate the optical properties of InAs self-assembled quantum dots grown on (N11)A/B GaAs substrates, by means of cw photoluminescence under different excitation power densities. We observe a sizeable blue-shift of photoluminescence band induced by increasing the photogenerated carrier density. The shift depends on the substrate orientation and exhibits a strong asymmetric dependence on the substrate termination. We attribute the photoluminescence blue-shift to a reverse quantum confined Stark shift of ground state transition energies in the quantum dots. This effect arises from the photogenerated charge screening of the built-in piezoelectric field present in such strained structures grown on high index planes. © 2000 American Institute of Physics.


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