Athermal annealing of phosphorus-ion-implanted silicon

Grun, J.; Fischer, R. P.; Fischer, R.P.; Peckerar, M.; Felix, C. L.; Felix, C.L.; Covington, B. C.; Covington, B.C.; DeSisto, W. J.; DeSisto, W.J.; Donnelly, D. W.; Donnelly, D.W.; Ting, A.; Manka, C. K.; Manka, C.K.
September 2000
Applied Physics Letters;9/25/2000, Vol. 77 Issue 13
Academic Journal
A 1 cm[sup 2] area in phosphorus-implanted silicon samples is annealed by irradiation of a much smaller 0.002 cm[sup 2] area with a single laser pulse. Resistivity of the annealed region is uniform and similar to that measured after thermal annealing. Electrically activated donors did not diffuse into the sample and only slightly towards the sample surface. The process is 100% reproducible. We present evidence that the annealing is not caused by heat. © 2000 American Institute of Physics.


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