Influence of crystal polarity on the properties of Pt/GaN Schottky diodes

Karrer, Uwe; Ambacher, Oliver; Stutzmann, Martin
September 2000
Applied Physics Letters;9/25/2000, Vol. 77 Issue 13
Academic Journal
Si-doped epitaxial GaN layers with Ga- and N-face polarity were grown by plasma-induced molecular-beam epitaxy (PIMBE) in order to characterize the influence of polarity on the electrical properties of Pt Schottky diodes. Different barrier heights for Pt onto these two materials are obtained from the dependence of the effective barrier height versus ideality factor, determined by I-V measurements to be 1.1 and 0.9 eV for Ga- and N-face GaN, respectively. C-V measurements confirm the greater barrier heights for Ga-face material. A possible explanation for this behavior can be a different band bending of the conduction and valence band, inferred from the self-consistent solution of the Schro¨dinger-Poisson equation, including polarization-induced surface and interface charges, which result from the different spontaneous polarization in epitaxial layers with different polarity. © 2000 American Institute of Physics.


Related Articles

  • Electrode shapes for high-power diodes with non-space-charge-limited flow. Peter, William // Journal of Applied Physics;4/1/1992, Vol. 71 Issue 7, p3197 

    Provides information on a study that derived electrode shapes which generalize the conventional Pierce criteria to the non-space-charge-limited and high-power regimes. Details on several equations; Conclusions.

  • Extending the optimization of the rotating transformer brushless excitation to all rectifier modes. Károly Veszprémi // Electrical Engineering;Feb2009, Vol. 90 Issue 8, p559 

    Abstract  Brushless excitation of a synchronous machine has a significant advantage: no slip-rings are necessary. The rotating transformer method is investigated: the excitation machine is a wound rotor induction machine with controllable voltage supply on the stator side. The synchronous...

  • Time Dependence of the Capacitance of a MOS Silicon Tunnel Diode under the Influence of Hydrogen. Gaman, V. I.; Kalygina, V. M. // Russian Physics Journal;Apr2003, Vol. 46 Issue 4, p329 

    The results of theoretical and experimental investigations into the time dependence of the capacitance of MOS silicon diodes with a thin tunnel dielectric and a palladium field electrode under the influence of a gas hydrogen-containing mixture are presented. Analytical expressions are derived...

  • High-power laser diodes of wavelength 808 nm based on various types of asymmetric heterostructures with an ultrawide waveguide. Bezotosnyi, V. V.; Vasil�eva, V. V.; Vinokurov, D. A.; Kapitonov, V. A.; Krokhin, O. N.; Leshko, A. Yu.; Lyutetskii, A. V.; Murashova, A. V.; Nalet, T. A.; Nikolaev, D. N.; Pikhtin, N. A.; Popov, Yu. M.; Slipchenko, S. O.; Stankevich, A. L.; Fetisova, N. V.; Shamakhov, V. V.; Tarasov, I. S. // Semiconductors;Mar2008, Vol. 42 Issue 3, p350 

    The parameters of high-power multimode laser diodes featuring a radiation wavelength of 808 nm obtained on the basis of asymmetric heterostructures with an ultrawide waveguide in the systems of AlGaAs/GaAs and (Al)GaInP/GaInAsP/GaAs are compared. In the lasers based on an AlGaAs/GaAs system, the...

  • Passive Q-switching of a diode-side-pumped Nd-doped mixed gadolinium yttrium vanadate bounce laser. Omatsu, T.; Minassian, A.; Damzen, M.J. // Applied Physics B: Lasers & Optics;Mar2008, Vol. 90 Issue 3/4, p445 

    High power passive Q-switching was achieved with a pulse width of 18–32 ns by using a diode-side-pumped Nd:Gd0.6Y0.4VO4 bounce amplifier. An average output power of > 8 W was obtained at a pump power of 39 W. The peak power of the Q-switched output was adjusted within 1.9–5.2 kW by...

  • Research on Energy-stored Programmable 5.0 kA Surge Current Testing Equipment. Dai Juan; Zhao Zhihong // International Journal of Hybrid Information Technology;Sep2013, Vol. 6 Issue 5, p1 

    Surge current test data have been taken on as one important parameter among the process of the production and application of rectifier diode. According to the National Rectifying Diode Surge Current Testing Standards, surge current is usually generated from transformer and simultaneously tested...

  • Cooperative effects in the case of pulsed self-heating of a p-i-n diode. Gorbatyuk, A. V.; Serkov, F. B. // Semiconductors;Aug2009, Vol. 43 Issue 8, p1028 

    A variant of the analytical model for distributed injection-related and thermal processes occurring during self-heating of a semiconductor p-i-n diode is suggested. Transient characteristics of the voltage, which reveal the stages of preliminary and enhanced self-heating and also of thermal...

  • Esaki tunnel diodes based on vertical Si-Ge nanowire heterojunctions. Fung, Wayne Y.; Lin Chen; Wei Lu // Applied Physics Letters;8/29/2011, Vol. 99 Issue 9, p092108 

    High performance Esaki tunnel diodes [L. Esaki, Phys. Rev. 109, 603 (1958)] based on small-diameter Ge/Si core/shell nanowires vertically grown on Si substrates are demonstrated. The devices exhibit pronounced negative differential resistance with peak-to-valley current ratio of 2.75, high peak...

  • High-efficiency eye-safe intracavity Raman laser at 1531 nm with SrWO4 crystal. Fan, Y. X.; Liu, Y.; Duan, Y. H.; Wang, Q.; Fan, L.; Wang, H. T.; Jia, G. H.; Tu, C. Y. // Applied Physics B: Lasers & Optics;Nov2008, Vol. 93 Issue 2/3, p327 

    A high-efficiency diode-end-pumped Q-switched eye-safe linearly-polarized intracavity Raman laser at 1531 nm is demonstrated, with Nd:YVO4 as the laser medium and SrWO4 as the Raman crystal. The highest average power of 1.93 W is achieved, with an incident pump of 15.6 W and a repetition rate of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics