Valence band offset and hole injection at the 4H-, 6H-SiC/SiO[sub 2] interfaces

Afanas'ev, V. V.; Afanas'ev, V.V.; Stesmans, A.; Stesman, A.V.
September 2000
Applied Physics Letters;9/25/2000, Vol. 77 Issue 13
Academic Journal
The valence band offset between 4H-, 6H-SiC, and grown-on thermal oxide is directly measured using internal photoemission of holes. The obtained value ΔE[sub V]=2.9±0.1 eV in combination with the earlier reported barrier for valence electrons yields an oxide band gap width of 8.9 eV, close to the intrinsic value for amorphous SiO[sub 2] which suggests an abrupt SiC/SiO[sub 2] interface. Hole tunneling from SiC into SiO[sub 2] is mediated by oxide defect states distributed in an energy range of ∼1 eV above the SiO[sub 2] valence band. © 2000 American Institute of Physics.


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