TITLE

Aluminum-seeded growth of microcrystalline Si thin film onto SnO[sub 2] substrate

AUTHOR(S)
Lee, Chang Hyun; Chang Hyun Lee; Lim, Koeng Su; Koeng Su Lim
PUB. DATE
September 2000
SOURCE
Applied Physics Letters;9/25/2000, Vol. 77 Issue 13
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
To improve the crystallinity of thin boron-doped microcrystalline Si (p-μc-Si:H) films at an initial growth stage, we tried an Al-seeding method, which is to deposit an ultrathin (∼50 Å) Al layer onto a transparent conducting oxide before preparing the p-μc-Si:H film by using a mercury-sensitized photochemical vapor deposition method. It was found that the Al layer serves as seeds to facilitate the p-μc-Si:H with high crystallinity at an initial growth stage and the Al seeds stimulate the nucleation of Si crystallites. It was also found that the absorption loss in the ultrathin (∼50 Å) Al-seed layer is negligible in the visible wavelength region due to its natural oxidation. When used in superstrate-type p-i-n amorphous silicon solar cells, even the Al-seeded p-μc-Si:H film having a several hundred angstrom thickness acts as an excellent p layer compared to the conventional p-μc-Si:H. © 2000 American Institute of Physics.
ACCESSION #
4414902

 

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