Diode-free magnetic random access memory using spin-dependent tunneling effect

Wang, Frank Z.
September 2000
Applied Physics Letters;9/25/2000, Vol. 77 Issue 13
Academic Journal
A diode-free magnetic random access memory comprises two sets of conductive lines, an array of magnetic tunnel junctions at each intersection, and a peripheral circuitry. Such a simplified diode-free architecture described in this letter overcomes the diode-area constraint in the prior art and achieves a significant breakthrough in storage density. © 2000 American Institute of Physics.


Related Articles

  • Effects of two in-plane fields on the magnetization reversal mechanism in magnetic tunnel junction elements. Shang, Ping; Petford-Long, Amanda K.; Anthony, Thomas C. // Journal of Applied Physics;5/15/2002 Part 1, 2 & 3, Vol. 91 Issue 10, p7703 

    One of the potential applications of the spin tunnel junction is as magnetic random access memory (MRAM) elements. For MRAM application purposes, two in-plane perpendicularly applied fields are required during magnetization reversal. In this article, Lorentz transmission electron microscopy has...

  • Spin polarized electronic reflections at metal–oxide interfaces: A technique for characterizing tunneling barriers in magnetic random access memory devices. Ounadjela, K.; Da Costa, V.; Iovan, A.; Dimopoulos, T.; Dahmani, F.; Mahenthiran, D.; Dieny, B.; Allen, W.; Gregg, J. F. // Journal of Applied Physics;5/15/2002 Part 1, 2 & 3, Vol. 91 Issue 10, p7466 

    One of the most critical steps in the realization of high quality tunneling devices is the fabrication of ultrathin oxide layers. This article describes a powerful technique for controlling the oxidation of ultrathin metallic layers. The technique consists of depositing the metallic layer to be...

  • Layered tunnel barriers for nonvolatile memory devices. Likharev, Konstantin K. // Applied Physics Letters;10/12/1998, Vol. 73 Issue 15 

    Fowler–Nordheim tunneling of electrons through “crested” energy barriers (with the height peak in the middle) is much more sensitive to applied voltage than that through barriers of uniform height. Calculations for trilayer barriers, with layer parameters typical for...

  • Field-effect trap-level-distribution model of dynamic random access memory data retention characteristics. Hiraiwa, A.; Ogasawara, M.; Natsuaki, N.; Itoh, Y.; Iwai, H. // Journal of Applied Physics;5/15/1997, Vol. 81 Issue 10, p7053 

    Dynamic random access memory data retention characteristics were investigated as a function of operating voltage. Based on a statistical process, called the trap-level-distribution model, which was proposed in our previous report, we further assumed that the junction leakage current by...

  • Area scaling and voltage dependence of time-to-breakdown in magnetic tunnel junctions. Das, J.; Degraeve, R.; Roussel, P.; Groeseneken, G.; Borghs, G.; Boeck, J. De // Journal of Applied Physics;5/15/2002 Part 1, 2 & 3, Vol. 91 Issue 10, p7712 

    The development of magnetic random access memory requires very reliable magnetic tunnel junctions (MTJs). However these devices are prone to dielectric breakdown. To investigate the reliability of the MTJs, we performed constant voltage stress tests. This study shows the area scaling and the...

  • Synthetic ferrimagnet free layer tunnel junction for magnetic random access memories. Sousa, R. C.; Zhang, Zhongzhi; Freitas, P. P. // Journal of Applied Physics;5/15/2002 Part 1, 2 & 3, Vol. 91 Issue 10, p7700 

    In this work a synthetic ferrimagnet structure as a spin dependent tunnel junction free layer is proposed as a magnetic random access memories cell. The CoFe/Ru/CoFe and CoFe/NiFe/Ru/NiFe/ CoFe systems show antiferromagnetically coupling range > 1000 Oe and rotate rigidly anti-aligned with...

  • Magnetic tunneling applied to memory (invited). Daughton, J.M. // Journal of Applied Physics;4/16/1997, Vol. 81 Issue 8, p3758 

    Investigates random access magnetoresistive memories. Design approaches for spin dependent tunneling (SDT) memory; Transistor per cell approach similar to semiconductor dynamic random access memory; Comparison with giant magnetoresistive (GMR) memory.

  • Spin dependent tunneling devices fabricated for magnetic random access memory applications using latching mode. Wang, D.; Tondra, M.; Pohm, A. V.; Nordman, C.; Anderson, J.; Daughton, J. M.; Black, W. C. // Journal of Applied Physics;5/1/2000, Vol. 87 Issue 9, p6385 

    Spin dependent tunneling (SDT) devices were fabricated as building blocks for magnetic random access memory (MRAM) applications using latching electronics. The basic SDT structure was NiFeCo/Al[sub 2]O[sub 3]/CoFe/IrMn deposited using rf diode sputtering. The SDT structures and the word and...

  • Buried word line planarization and roughness control for tunnel junction magnetic random access memory switching. Sousa, R. C.; Soares, V.; Silva, F.; Bernardo, J.; Freitas, P. P. // Journal of Applied Physics;5/1/2000, Vol. 87 Issue 9, p6382 

    Spin dependent tunnel junctions were fabricated on top of buried word lines. This was achieved modifying an existent 1.2 μm complementary metal–oxide–semiconductor backend metalization process. The word lines are 0.2 μm thick and 4 μm wide. Roughness over the buried line...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics