TITLE

Diode-free magnetic random access memory using spin-dependent tunneling effect

AUTHOR(S)
Wang, Frank Z.
PUB. DATE
September 2000
SOURCE
Applied Physics Letters;9/25/2000, Vol. 77 Issue 13
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A diode-free magnetic random access memory comprises two sets of conductive lines, an array of magnetic tunnel junctions at each intersection, and a peripheral circuitry. Such a simplified diode-free architecture described in this letter overcomes the diode-area constraint in the prior art and achieves a significant breakthrough in storage density. © 2000 American Institute of Physics.
ACCESSION #
4414899

 

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