Patterned three-color ZnCdSe/ZnCdMgSe quantum-well structures for integrated full-color and white light emitters

Luo, Y.; Guo, S. P.; Guo, S.P.; Maksimov, O.; Tamargo, M. C.; Tamargo, M.C.; Asnin, V.; Pollak, F. H.; Pollak, F.H.; Chen, Y. C.; Chen, Y.C.
December 2000
Applied Physics Letters;12/25/2000, Vol. 77 Issue 26
Academic Journal
We report the growth and characterization of patterned ZnCdSe/ZnCdMgSe quantum-well (QW) structures grown adjacent to each other on a single InP substrate. Each structure emits at a different wavelength range spanning the visible range. Stripe and square-shaped QW structures of different emission wavelengths, with lateral dimensions between 15 and 60 μm, were deposited sequentially by shadow mask selective area epitaxy (SAE) steps. Conventional and microphotoluminescence measurements were used to characterize the patterned QWs. They exhibit well-defined excitonic emission in the red, yellow, and green regions of the visible spectrum. This result demonstrates the feasibility of fabricating integrated full-color light emitting diode and laser-based display elements and white light sources using the ZnCdMgSe material system and shadow mask SAE. © 2000 American Institute of Physics.


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