TITLE

Atom-scale optical determination of Si-oxide layer thickness during layer-by-layer oxidation: Theoretical study

AUTHOR(S)
Nakayama, Takashi; Murayama, Misao
PUB. DATE
December 2000
SOURCE
Applied Physics Letters;12/25/2000, Vol. 77 Issue 26
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Optical anisotropy spectra of SiO[sub 2]/Si(001) interfaces were theoretically investigated based on the sp[sup 3]s[sup *] tight-binding calculation. In the spectra, we found three types of optical transitions originating from the E[sub 1] and E[sub 2] transitions of bulk Si, the interface Si-Si bonds, and the dangling-bond states at the interface. It was shown that the sign of these transitions oscillates during the layer-by-layer oxidation, which indicates that by counting the oscillation one can determine the layer thickness of oxidized Si layers in an atomic scale. © 2000 American Institute of Physics.
ACCESSION #
4414874

 

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