Material properties of bulk InGaAs and InAlAs/InGaAs heterostructures grown on (111)B and (111)B misoriented by 1° towards <211> InP substrates

Yeo, W.; Dimitrov, R.; Schaff, W. J.; Schaff, W.J.; Eastman, L. F.; Eastman, L.F.
December 2000
Applied Physics Letters;12/25/2000, Vol. 77 Issue 26
Academic Journal
High-quality bulk InGaAs and InAlAs/InGaAs heterostructures have been grown on InP substrates with different orientation using molecular-beam epitaxy. It was found that the electrical and structural properties were strongly dependent on growth temperature and substrate misorientation. The electrical and structural properties of the film were investigated by high-resolution x-ray diffraction, Nomarski microscope, and Hall measurements. Full-width at half-maximum of 380 arcsec for bulk InGaAs on (111)B and 70 arcsec on (111)B misoriented by 1° towards <211> InP substrates were measured by x-ray diffraction. The room temperature electron Hall mobility for bulk InGaAs of 5100 cm[sup 2]/V s, doped with Si concentration at the mid-10[sup 17]/cm[sup 3], and two-dimensional electron gas mobility of 11 200 cm[sup 2]/V s, and sheet density of 3.0x10[sup 12]/cm[sup 2] for InAlAs/InGaAs heterostructures on (111)B misoriented by 1° towards <211> InP substrates were achieved. © 2000 American Institute of Physics.


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