TITLE

Optical characterization of relaxation processes in nitrogen-doped ZnSe layers

AUTHOR(S)
Worschech, L.; Ossau, W.; Nu¨rnberger, J.; Faschinger, W.; Landwehr, G.
PUB. DATE
December 2000
SOURCE
Applied Physics Letters;12/25/2000, Vol. 77 Issue 26
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Linear polarization of the nitrogen acceptor bound exciton I[sub 1][sup N] luminescence, which reflects the anisotropic strain relief of the ZnSe lattice, is exploited to monitor two independent relaxation processes in nitrogen-doped ZnSe films. An inhomogeneous vertical strain profile is identified by a maximum in-plane polarization when 800 nm of the sample surface are removed. After exposure of nitrogen-doped ZnSe films to intense light, an isotropic strain relief is observed. The I[sub 1][sup N] peak position is shifted to lower energies, whereas the anisotropic polarization remains constant. © 2000 American Institute of Physics.
ACCESSION #
4414869

 

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