TITLE

Strong interface-induced changes on the numerical calculated Raman scattering in Si/3C-SiC superlattices

AUTHOR(S)
Bezerra, E. F.; Bezerra, E.F.; Freire, V. N.; Freire, V.N.; Souza Filho, A. G.; Filho, A.G. Souza; Mendes Filho, J.; Filho, J. Mendes; Lemos, V.; Ikoma, Y.; Watanabe, F.; Motooka, T.
PUB. DATE
December 2000
SOURCE
Applied Physics Letters;12/25/2000, Vol. 77 Issue 26
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Raman spectra of (3C-SiC)[sub 8-δ]/(3C-SiC[sub 0.5]Si[sub 0.5])[sub δ]/(Si)[sub 8-δ]/(3C-SiC[sub 0.5]Si[sub 0.5])[sub δ] superlattices with interfacial transition regions of thickness δ varying from one to three monolayers are calculated. It is shown that severe frequency shifts (up to -86 cm[sup -1]) and the flattening of the folded optical phonons dispersion curves are due to the interfacial regions, strongly affecting the Raman spectrum in consequence. With increasing interface thickness, the Raman peaks are enhanced in the middle frequency range. These effects are mainly attributed to localization of atomic displacements at the Si/3C-SiC or the 3C-SiC/Si interfacial transition regions. © 2000 American Institute of Physics.
ACCESSION #
4414864

 

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