Strong interface-induced changes on the numerical calculated Raman scattering in Si/3C-SiC superlattices

Bezerra, E. F.; Bezerra, E.F.; Freire, V. N.; Freire, V.N.; Souza Filho, A. G.; Filho, A.G. Souza; Mendes Filho, J.; Filho, J. Mendes; Lemos, V.; Ikoma, Y.; Watanabe, F.; Motooka, T.
December 2000
Applied Physics Letters;12/25/2000, Vol. 77 Issue 26
Academic Journal
Raman spectra of (3C-SiC)[sub 8-δ]/(3C-SiC[sub 0.5]Si[sub 0.5])[sub δ]/(Si)[sub 8-δ]/(3C-SiC[sub 0.5]Si[sub 0.5])[sub δ] superlattices with interfacial transition regions of thickness δ varying from one to three monolayers are calculated. It is shown that severe frequency shifts (up to -86 cm[sup -1]) and the flattening of the folded optical phonons dispersion curves are due to the interfacial regions, strongly affecting the Raman spectrum in consequence. With increasing interface thickness, the Raman peaks are enhanced in the middle frequency range. These effects are mainly attributed to localization of atomic displacements at the Si/3C-SiC or the 3C-SiC/Si interfacial transition regions. © 2000 American Institute of Physics.


Related Articles

  • Raman study on the Ni/SiC interface reaction. Kurimoto, E.; Harima, H.; Toda, T.; Sawada, M.; Iwami, M.; Nakashima, S. // Journal of Applied Physics;6/15/2002, Vol. 91 Issue 12, p10215 

    Ni/SiC interface reaction was investigated by Raman scattering. The specimen consisted of a 200 nm Ni layer deposited on a both-side polished 6H-SiC wafer with postannealing at 500-1100 °C. Raman spectra were observed from both faces of the specimen, i.e., from the Ni layer side and from the...

  • Raman scattering from anisotropic LO-phonon–plasmon–coupled mode in n-type 4H– and 6H–SiC. Harima, Hiroshi; Nakashima, Shin-ichi; Uemura, Tomoki // Journal of Applied Physics;8/1/1995, Vol. 78 Issue 3, p1996 

    Examines the LO-phonon-plasmon-coupled modes in n-type hydrogen-silicon carbide single crystals. Use of Raman scattering at room temperature; Overview of the plasmon frequency, carrier damping and phonon damping; Longitudinal and transverse effective mass components of the electron.

  • Wannier�Stark Localization in the Natural Superlattice of Silicon Carbide Polytypes. Sankin, V. I. // Semiconductors;Jul2002, Vol. 36 Issue 7, p717 

    Results of a study of silicon carbide polytypes under high electric fields are presented. The presence of a natural superlattice in silicon carbide polytypes is shown to introduce a miniband structure into the conduction band, which leads to a number of effects: negative differential...

  • Resonance enhancement of electronic Raman scattering from nitrogen defect levels in silicon carbide. Burton, J. C.; Long, F. H. // Journal of Applied Physics;8/15/1999, Vol. 86 Issue 4, p2073 

    Presents Raman scattering data from 4H- and 6H-SiC which demonstrate that electronic Raman scattering from nitrogen defect levels can be resonantly enhanced with red or near-infrared laser excitation at room temperature. Experiment; Results; Discussion; Conclusion.

  • Raman characterization and stress analysis of AlN grown on SiC by sublimation. Liu, L.; Liu, B.; Edgar, J. H.; Rajasingam, S.; Kuball, M. // Journal of Applied Physics;11/1/2002, Vol. 92 Issue 9, p5183 

    The stress distribution in bulk AlN crystals seeded on 6H-SiC was theoretically modeled and also determined experimentally from Raman peak positions. The full width at half maximum of the AlN Raman peaks showed the crystal quality improved as its thickness increased. The theoretical frequency...

  • Raman scattering from LO phonon-plasmon coupled modes and Hall-effect in n-type silicon carbide 4H–SiC. Chafai, M.; Jaouhari, A.; Torres, A.; Anto´n, R.; Martı´n, E.; Jime´nez, J.; Mitchel, W. C. // Journal of Applied Physics;11/15/2001, Vol. 90 Issue 10, p5211 

    The transport properties, particularly free carrier density and mobility, of SiC are usually determined by the Hall effect. Raman spectroscopy has been shown to yield transport parameters similar to the Hall effect. The analysis of the longitudinal optical plasmon coupled (LOPC) modes in doped...

  • Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering. Yugami, H.; Nakashima, S.; Mitsuishi, A.; Uemoto, A.; Shigeta, M.; Furukawa, K.; Suzuki, A.; Nakajima, S. // Journal of Applied Physics;1/1/1987, Vol. 61 Issue 1, p354 

    Presents a study which characterized the free-carrier concentrations in doped Î’-silicon carbide crystals. Measurement of LO photon-overdamped plasmon coupled modes in n-type epitaxial films of &Beta-silicon carbide; Evaluation of the carrier concentration and damping constant; Discussion on...

  • Raman scattering of SiC: Application to the identification of heteroepitaxy of SiC polytypes. Okumura, H.; Sakuma, E.; Lee, J. H.; Mukaida, H.; Misawa, S.; Endo, K.; Yoshida, S. // Journal of Applied Physics;2/1/1987, Vol. 61 Issue 3, p1134 

    Investigates heteroepitaxial growth of 3C and 6H-silicon carbide using Raman scattering. Details of the experiment; Growth of 3C-silicon carbide on 6H-silicon carbide by chemical vapor deposition; Identification of heterostructure of thin layers using Raman spectra.

  • Structural and electrical studies of radio frequency sputtered hydrogenated amorphous silicon carbide films. Choi, W. K.; Loo, F. L.; Ling, C. H.; Loh, F. C.; Tan, K. L. // Journal of Applied Physics;12/15/1995, Vol. 78 Issue 12, p7289 

    Discusses the structural and electrical properties of radio frequency sputtered hydrogenated amorphous silicon carbide films. Substrate used in the study; Influence of hydrogen on deposition rate; Raman spectra of the films.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics