TITLE

Resonant tunneling diodes made up of stacked self-assembled Ge/Si islands

AUTHOR(S)
Schmidt, O. G.; Schmidt, O.G.; Denker, U.; Eberl, K.; Kienzle, O.; Kienzie, O.; Ernst, F.; Haug, R. J.; Haug, R.J.
PUB. DATE
December 2000
SOURCE
Applied Physics Letters;12/25/2000, Vol. 77 Issue 26
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Multiple layers of self-assembled Ge/Si islands are used for resonant tunneling diodes (RTDs). The extremely closely stacked Ge nanostructures form vertical channels with energetically deep thermalization layers and high Si double barriers. Two resonances are found in the RTD current-voltage curve, which are attributed to the heavy-heavy hole (hh) and heavy-light hole (lh) transition. The lh resonance shows negative differential resistance up to 50 K. With increasing magnetic field, the lh resonance slightly shifts to higher voltages. © 2000 American Institute of Physics.
ACCESSION #
4414854

 

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