Electric-field-dependent carrier capture and escape in self-assembled InAs/GaAs quantum dots

Fry, P. W.; Fry, P.W.; Finley, J. J.; Finley, J.J.; Wilson, L. R.; Wilson, L.R.; Lemaitre, A.; Mowbray, D. J.; Mowbray, D.J.; Skolnick, M. S.; Skolnick, M.S.; Hopkinson, M.; Hill, G.; Clark, J. C.; Clark, J.C.
December 2000
Applied Physics Letters;12/25/2000, Vol. 77 Issue 26
Academic Journal
Photoluminescence and complementary photocurrent spectroscopy, both as a function of electric field, are used to probe carrier capture and escape mechanisms in InAs/GaAs quantum dots. Carrier capture from the GaAs matrix is found to be highly field sensitive, being fully quenched in fields of only 15 kV/cm. For fields less than 20 kV/cm, carriers excited in the wetting layer are shown to be captured by the dots very effectively, whereas for fields in excess of 50 kV/cm tunnel escape from the wetting layer into the GaAs continuum is dominant. For excitation directly into the dots, radiative recombination dominates up to 100 kV/cm. © 2000 American Institute of Physics.


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