Current transport mechanism of p-GaN Schottky contacts

Shiojima, Kenji; Sugahara, Tomoya; Sakai, Shiro
December 2000
Applied Physics Letters;12/25/2000, Vol. 77 Issue 26
Academic Journal
Transient measurements of I-V and depletion layer capacitance were conducted to clarify the leaky current flow mechanism in Ni Schottky contacts formed on Mg-doped p-GaN. We found that carrier capture and emission from acceptor-like deep level defects cause depletion layer width (W[sub dep]) to vary significantly. Upon ionization of the defects by white light, which results in small W[sub dep], current can go through the Schottky barrier and a leaky I-V curve is observed. Upon filling by current injection, W[sub dep] becomes larger and the large original Schottky barrier height is seen. The time constant of carrier emission is as long as 8.3x10[sup 3] min. © 2000 American Institute of Physics.


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