Electronic properties of the diamond films with nitrogen impurities: An x-ray absorption and photoemission spectroscopy study

Chang, Y. D.; Chiu, A. P.; Pong, W. F.; Tsai, M.-H.; Chang, Y. K.; Chen, Y. Y.; Chiou, J. W.; Jan, C. J.; Tseng, P. K.; Wu, R. T.; Chung, S. C.; Tsang, K. L.; Lin, I. N.; Cheng, H. F.
December 2000
Applied Physics Letters;12/25/2000, Vol. 77 Issue 26
Academic Journal
X-ray absorption near-edge structure (XANES) measurements have been performed for nitrogen (N) containing diamond films with three different N concentrations at the C K-edge using the sample drain current mode. The C K-edge XANES spectra of these diamond films resemble that of the pure diamond regardless of the N concentration, which suggests that the overall bonding configuration of the C atom is unaltered. N impurities are found to reduce the intensities of both the sp[sup 2]- and sp[sup 3]-bond derived resonance features in the XANES spectra. The valence-band photoelectron spectra indicate that N atoms cause the broadening of the valence band σ- and π-bond features and the enhancement and reduction of the σ- and π-bond features, respectively. © 2000 American Institute of Physics.


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