Thermal dynamics of VO[sub 2] films within the metal-insulator transition: Evidence for chaos near percolation threshold

de Almeida, L. A. L.; de Almeida, L.A.L.; Deep, G. S.; Deep, G.S.; Lima, A. M. N.; Lima, A.M.N.; Neff, H.
December 2000
Applied Physics Letters;12/25/2000, Vol. 77 Issue 26
Academic Journal
The thermal dynamics of thin vanadium dioxide films at the martensitic metal-insulator phase transition has been evaluated experimentally by thermal excitation spectroscopy. Over the transition region, the device becomes highly nonlinear, and its bolometric performance is affected. At low thermal cycling rates for a temperature around the percolation threshold, the device stochastically switches into an unusual pattern. The originally smooth and monotonic shape of the R(T) curve for minor loops suddenly becomes unstable and unpredictable. By direct observation of at least two strange attractors, the phenomenon clearly has been identified as chaotic. Bolometric performance of VO[sub 2] based devices in the transition region may suffer strong degradation for low thermal cycling rates. In this region, sensor responsivity for periodic thermal excitation is significantly reduced. Resistance noise is 1/f-type and self-generated oscillations were observed at frequency <10[sup -2] Hz. © 2000 American Institute of Physics.


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