Correlation between the gap energy and size of single InAs quantum dots on GaAs(001) studied by scanning tunneling spectroscopy

Yamauchi, T.; Matsuba, Y.; Bolotov, L.; Tabuchi, M.; Nakamura, A.
December 2000
Applied Physics Letters;12/25/2000, Vol. 77 Issue 26
Academic Journal
Scanning tunneling spectroscopy has been used to study quantum-size effects on the electronic structure of InAs quantum dots (QDs) in correlation with their morphologies. The measured gap energy increases with decreasing dot height in the range of 3.4-7.6 nm. Comparison between the observed height dependence and calculation based on a quantum disk model indicates that the gap energy of a single InAs QD is mainly determined by the quantum confinement in the vertical direction of the QD. © 2000 American Institute of Physics.


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