TITLE

Impact ionization coefficients of Al[sub 0.8]Ga[sub 0.2]As

AUTHOR(S)
Ng, B. K.; Ng, B.K.; David, J. P. R.; David, J.P.R.; Plimmer, S. A.; Plimmer, S.A.; Hopkinson, M.; Tozer, R. C.; Tozer, R.C.; Rees, G. J.; Rees, G.J.
PUB. DATE
December 2000
SOURCE
Applied Physics Letters;12/25/2000, Vol. 77 Issue 26
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The impact ionization coefficients in bulk Al[sub 0.8]Ga[sub 0.2]As have been determined from photomultiplication measurements over the electric field range of 328-519 kV/cm. Unlike in Al[sub x]Ga[sub 1-x]As (x≤0.6), where the electron to hole ionization coefficients ratios (1/k) are less than 2, the 1/k value in Al[sub 0.8]Ga[sub 0.2]As was found to be greater than 10. Excess noise measurements corroborated the multiplication results, suggesting that this material may be a suitable multiplication medium for low noise avalanche photodiodes. © 2000 American Institute of Physics.
ACCESSION #
4414842

 

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