Growth and characterization of low-temperature grown GaN with high Fe doping

Akinaga, H.; Németh, S.; De Boeck, J.; Nistor, L.; Bender, H.; Borghs, G.; Ofuchi, H.; Oshima, M.
December 2000
Applied Physics Letters;12/25/2000, Vol. 77 Issue 26
Academic Journal
We succeeded in growing highly Fe-doped GaN films by solid-source molecular beam epitaxy using an electron-cyclotron-resonance microwave nitrogen plasma. The substrate temperature was in the range of 380-520 °C. The samples were analyzed by x-ray diffraction and transmission electron microscopy, and showed hexagonal (wurtzite) or cubic (zincblende) structure or a mixture of both phases. The Fe concentration was on the order of 10[sup 19] cm[sup -3] and extended x-ray absorption fine structure data show that the Fe is substituting the Ga in GaN. The magnetization measurements as a function of temperature reveal ferromagnetic properties below 100 K for the sample grown at the lowest temperature. © 2000 American Institute of Physics.


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