Temperature dependence of surface photovoltage of bulk semiconductors and the effect of surface passivation

Datta, Shouvik; Gokhale, M. R.; Gokhale, M.R.; Shah, A. P.; Shah, A.P.; Arora, B. M.; Arora, B.M.; Kumar, Shailendra
December 2000
Applied Physics Letters;12/25/2000, Vol. 77 Issue 26
Academic Journal
Surface photovoltage (SPV) of n-GaAs decreases both above and below a certain transition temperature. We explain this phenomenon in terms of a Schottky contact based model and relative dominance of thermal and nonthermal parts of the dark current. This also explains the observed increase of SPV of p-GaAs below room temperature. Our analysis is further confirmed from the temperature dependence of the SPV measurements on p-InP and n-InP samples. Surface passivation is seen to lower the transition temperature of n-GaAs. © 2000 American Institute of Physics.


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