TITLE

Synthesis and characterization of pure C40 TiSi[sub 2]

AUTHOR(S)
Chen, S. Y.; Chen, S.Y.; Shen, Z. X.; Shen, Z.X.; Li, K.; See, A. K.; See, A.K.; Chan, L. H.; Chan, L.H.
PUB. DATE
December 2000
SOURCE
Applied Physics Letters;12/25/2000, Vol. 77 Issue 26
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this letter, we report on the synthesis of a third phase of Ti disilicide, the C40 TiSi[sub 2] on Si substrate with pulsed laser annealing. This is achieved without doping the samples with foreign metals. We also show that with this C40 TiSi[sub 2], the technologically important C54 TiSi[sub 2] is achieved directly, completely bypassing the undesirable C49 phase. The C40 phase was identified using convergent beam electron diffraction. Raman spectrum of pure C40 TiSi[sub 2] was also obtained. The synthesis of the C40 phase without the additional refractory metal and its promotion effect on the C54 phase formation has important implications for the integrated circuit industry in 0.13 μm technology and beyond. © 2000 American Institute of Physics.
ACCESSION #
4414835

 

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