Synthesis and characterization of pure C40 TiSi[sub 2]

Chen, S. Y.; Chen, S.Y.; Shen, Z. X.; Shen, Z.X.; Li, K.; See, A. K.; See, A.K.; Chan, L. H.; Chan, L.H.
December 2000
Applied Physics Letters;12/25/2000, Vol. 77 Issue 26
Academic Journal
In this letter, we report on the synthesis of a third phase of Ti disilicide, the C40 TiSi[sub 2] on Si substrate with pulsed laser annealing. This is achieved without doping the samples with foreign metals. We also show that with this C40 TiSi[sub 2], the technologically important C54 TiSi[sub 2] is achieved directly, completely bypassing the undesirable C49 phase. The C40 phase was identified using convergent beam electron diffraction. Raman spectrum of pure C40 TiSi[sub 2] was also obtained. The synthesis of the C40 phase without the additional refractory metal and its promotion effect on the C54 phase formation has important implications for the integrated circuit industry in 0.13 μm technology and beyond. © 2000 American Institute of Physics.


Related Articles

  • In situ characterization of titanium silicide formation: The effect of Mo interlayer,... Zhang, S.-L.; Lavoie, C. // Journal of Applied Physics;3/1/1999, Vol. 85 Issue 5, p2617 

    Studies the formation of titanium silicide using in situ x-ray diffraction with millisecond time resolution and sheet resistance measurements. Experimental details; Results and discussion; Conclusions.

  • Kinetics aspects of TiSi2 deposition without silicon consumption. Bensahel, D.; Regolini, J. L.; Mercier, J. // Applied Physics Letters;10/9/1989, Vol. 55 Issue 15, p1549 

    Selectively deposited layers of TiSi2 have been obtained without Si substrate consumption using the TiCl4/SiH4 system diluted in H2 at 800 °C. For a given set of parameters, we show that TiSi2 formation uses Si coming from the substrate or from the gas phase, the principal parameters being...

  • Silicon loss during TiSi2 formation. Cohen, C.; Nipoti, R.; Siejka, J.; Bentini, G. G.; Berti, M.; Drigo, A. V. // Journal of Applied Physics;6/1/1987, Vol. 61 Issue 11, p5187 

    Focuses on a study which determined silicon loss in titanium silicide formation. Existence of contaminants in the formation of silicides by annealing metal-silicon couples; Methodology of the study; Results of the study.

  • Titanium disilicide formation on heavily doped silicon substrates. Beyers, Robert; Coulman, Don; Merchant, Paul // Journal of Applied Physics;6/1/1987, Vol. 61 Issue 11, p5110 

    Presents information on a study which investigated titanium disilicide formation on heavily doped silicon substrates with sheet resistance measurements, elemental depth profiling, and transmission electron microscopy. Methodology of the study; Results and discussion; Conclusion.

  • Properties of the TiSi2/p+n structures formed by ion implantation through silicide and rapid thermal annealing. Erzgräber, H. B.; Zaumseil, P.; Bugiel, E.; Sorge, R.; Tittelbach-Helmrich, K.; Richter, F.; Panknin, D.; Trapp, M. // Journal of Applied Physics;7/1/1992, Vol. 72 Issue 1, p73 

    Presents a study that examined silicided p[sup+]n junctions and contact resistivity test structures formed through implantation of boron-fluorine using titanium-silicon in crystalline and in silicon or germanium preamorphized silicon. Discussion on the diffusion of dopants from an implanted...

  • Silicide formation by reaction of Ta-Ti thin films and a Si single crystal. Dahan, R.; Pelleg, J.; Zevin, L. // Journal of Applied Physics;3/15/1990, Vol. 67 Issue 6, p2885 

    Presents a study which observed the silicon formation in a bulk system of Ti-Ta-Si prepared by arc melting and annealing. Technique for obtaining the reference alloy of tantalum and titanium silicides; Details of experimental procedures; Description of the bilayer configuration of Ti-Ta-Si.

  • Dependence of thermal stability of the titanium silicide/silicon structure on impurities. Ogawa, Shin-ichi; Yoshida, Takehito; Kouzaki, Takashi // Applied Physics Letters;2/19/1990, Vol. 56 Issue 8, p725 

    The effect of impurity on the thermal stability of titanium silicide (TiSi2)/single-crystal silicon (Si) structures has been studied. It is found that nitrogen and oxygen in the TiSi2 film significantly influence the morphological changes of a TiSi2/Si structure during high-temperature annealing...

  • Highly selective sputtering of silicon from TiSi[sub 2] at elevated temperature. Harper, J.M.E.; Motakef, S. // Applied Physics Letters;3/9/1992, Vol. 60 Issue 10, p1196 

    Demonstrates the selective sputtering of silicon from titanium silicide using low energy ion bombardment and elevated temperature. Preparation of the annealed titanium silicide; Demonstration of ion beam etching; Use of the silicide thickness as a function of time; Enrichment of silicon in the...

  • Temperature effects on the resistivity of polycrystalline silicon titanium salicide. Naem, A. A.; Deen, J.; Chee, L. Y. // Journal of Applied Physics;7/15/1994, Vol. 76 Issue 2, p1071 

    Reports on the characterization of the heating effects on the resistance of titanium salicide films formed on doped polycrystalline silicon materials. Expression for the temperature coefficient of resistivity; Device experimental preparations; Results and discussion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics