Chemical bonding state analysis of silicon carbide layers in Mo/SiC/Si multilayer mirrors by soft x-ray emission and absorption spectroscopy

Muramatsu, Yasuji; Takenaka, Hisataka; Ueno, Yuko; Gullikson, Eric M.; Perera, Rupert C.C.; Perera, Rupert C. C.
October 2000
Applied Physics Letters;10/23/2000, Vol. 77 Issue 17
Academic Journal
Soft x-ray emission and absorption spectra in the C K region of Mo/SiC/Si multilayer mirrors were measured using highly brilliant synchrotron radiation to identify the chemical bonding states of the buried silicon carbide layers. Comparison with the C 2p density of state (DOS) spectra, calculated by discrete variational-Xα molecular orbital calculations, of several SiC-based cluster models showed that the measured x-ray spectra approximately agreed with the calculated C 2p-DOS spectra of the c- and h-SiC-based SiC[sub x] models in which some silicon atoms were replaced by carbon atoms. The chemical bonding states of the silicon carbide layers in the Mo/SiC/Si multilayer mirrors were therefore estimated to be carbon-excessive silicon carbide. © 2000 American Institute of Physics.


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