Dislocation reduction in GaN films through selective island growth of InGaN

Keller, S.; Parish, G.; Speck, J. S.; Speck, J.S.; DenBaars, S. P.; DenBaars, S.P.; Mishra, U. K.; Mishra, U.K.
October 2000
Applied Physics Letters;10/23/2000, Vol. 77 Issue 17
Academic Journal
Dislocation reduction in GaN films grown on sapphire and silicon substrates was achieved by inserting thin InGaN layers grown in a selective island growth mode after partial passivation of the GaN surface with a submonolayer of silicon nitride. We show that this technique is most effective at reducing the pure edge dislocation density when it is high (i.e., >10[sup 10] cm[sup -2]) and less when the density is in the 10[sup 8]-10[sup 9] cm[sup -2] range. Thus, the structural quality of typically highly dislocated GaN on silicon films could be significantly improved, visible in a reduction of the (0002) full width at half maximum (FWHM) from 1300 arcsec for ordinary GaN on silicon to 800 arcsec for GaN films with silicon nitride/InGaN interlayers. In the case of GaN layers grown on sapphire (dislocation density ∼10[sup 9] cm[sup -2]), the method resulted mainly in a reduction of the FWHM of the (101¯2) and (202¯1) diffraction peaks. © 2000 American Institute of Physics.


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