Light-induced long-range hydrogen motion in hydrogenated amorphous silicon at room temperature

Cheong, Hyeonsik M.; Lee, Se-Hee; Se-Hee Lee; Nelson, Brent P.; Mascarenhas, Angelo; Deb, Satyen K.
October 2000
Applied Physics Letters;10/23/2000, Vol. 77 Issue 17
Academic Journal
We present evidence for long-range hydrogen motion in hydrogenated amorphous silicon (a-Si:H) under room-temperature illumination, by monitoring the changes in the Raman spectrum of an a-WO[sub 3] overlayer with illumination. We observe that illumination causes hydrogen to diffuse out of the a-Si:H layer into the a-WO[sub 3] layer. This hydrogen motion is observed to saturate after about 30 min when the a-Si:H is illuminated with 15 W/cm[sup 2] of the 514.5 nm laser line at room temperature. The amount of hydrogen that diffuses out of the a-Si:H layer is estimated semiquantitatively to be approximately 9x10[sup -4] at. %. © 2000 American Institute of Physics.


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