Electron beam and optical depth profiling of quasibulk GaN

Chernyak, L.; Osinsky, A.; Nootz, G.; Schulte, A.; Jasinski, J.; Jasinski, J; Benamara, M.; Liliental-Weber, Z.; Look, D. C.; Look, D.C.; Molnar, R. J.; Molnar, R.J.
October 2000
Applied Physics Letters;10/23/2000, Vol. 77 Issue 17
Academic Journal
Electron beam and optical depth profiling of thick (5.5-64 μm) quasibulk n-type GaN samples, grown by hydride vapor-phase epitaxy, were carried out using electron beam induced current (EBIC), microphotoluminescence (PL), and transmission electron microscopy (TEM). The minority carrier diffusion length, L, was found to increase linearly from 0.25 μm, at a distance of about 5 μm from the GaN/sapphire interface, to 0.63 μm at the GaN surface, for a 36-μm-thick sample. The increase in L was accompanied by a corresponding increase in PL band-to-band radiative transition intensity as a function of distance from the GaN/sapphire interface. We attribute the latter changes in PL intensity and minority carrier diffusion length to a reduced carrier mobility and lifetime at the interface, due to scattering at threading dislocations. The results of EBIC and PL measurements are in good agreement with the values for dislocation density obtained using TEM. © 2000 American Institute of Physics.


Related Articles

  • Electron beam induced current measurements of minority carrier diffusion length in gallium nitride. Chernyak, Leonid; Osinsky, Andrei; Temkin, Henryk; Yang, J. W.; Chen, Q.; Asif Khan, M. // Applied Physics Letters;10/21/1996, Vol. 69 Issue 17, p2531 

    Minority carrier diffusion length in epitaxial GaN layers was measured as a function of majority carrier concentration and temperature. The diffusion length of holes in n-type GaN is found to decrease from 3.4 to 1.2 μm in the doping range of 5×1015–2×1018 cm-3. The...

  • Photoluminescence of GaN: Effect of electron irradiation. Buyanova, I. A.; Wagner, Mt.; Chen, W. M.; Monemar, B.; Lindstro¨m, J. L.; Amano, H.; Akasaki, I. // Applied Physics Letters;11/16/1998, Vol. 73 Issue 20 

    The effect of electron irradiation on the optical properties of GaN material with various electrical conductivity (i.e., n type, compensated, and p type) is studied in detail by photoluminescence (PL) spectroscopy. Electron irradiation with a dose <10[sup 17] cm[sup -2] is found to have a minor...

  • Electron-beam dissociation of the MgH complex in p-type GaN. Myers, S. M.; Seager, C. H.; Wright, A. F.; Vaandrager, B. L.; Nelson, J. S. // Journal of Applied Physics;12/1/2002, Vol. 92 Issue 11, p6630 

    The dissociation of the MgH complex in GaN under low-energy electron-beam irradiation (LEEBI) and its reassociation during postirradiation annealing were measured using infrared vibration spectroscopy. The dissociation rate exhibits a pronounced dependence on the H isotope, being about 4 times...

  • Study of temperature dependence for the electron injection-induced effects in GaN. Chernyak, Leonid; Burdett, William; Osinsky, Andrei // Applied Physics Letters;8/26/2002, Vol. 81 Issue 9, p1633 

    Electron-beam injection-induced increase of minority carrier diffusion length in p-type GaN was studied as a function of sample temperature ranging from 25 °C to 130 °C. It was found that the rate for diffusion length increase exponentially decays with increasing temperature. This decay...

  • Dislocation related droop in InGaN/GaN light emitting diodes investigated via cathodoluminescence. Pozina, Galia; Ciechonski, Rafal; Zhaoxia Bi; Samuelson, Lars; Monemar, Bo // Applied Physics Letters;12/21/2015, Vol. 107 Issue 25, p1 

    Today's energy saving solutions for general illumination rely on efficient white light emitting diodes(LEDs). However, the output efficiency droop experienced in InGaN based LEDs with increasing current injection is a serious limitation factor for future development of bright white LEDs. We show...

  • Luminescence spectroscopy of GaN in the high-temperature regime from room temperature to 900 °C. Young, A. P.; Young, A.P.; Brillson, L. J.; Brillson, L.J. // Applied Physics Letters;7/31/2000, Vol. 77 Issue 5 

    We have measured the optical luminescence spectrum of GaN from the near infrared to the near ultraviolet at elevated temperatures. Despite intense blackbody radiation above 600 °C, luminescence is observable at 3 eV or greater at temperatures as high as 900 °C, i.e., including...

  • EBIC measurements of small diffusion length in semiconductor structures. Yakimov, E.B.; Borisov, S.S.; Zaitsev, S.I. // Semiconductors;Apr2007, Vol. 41 Issue 4, p411 

    The problems arising under submicron diffusion-length measurements by EBIC are discussed. As an example, the results of diffusion-length measurements in GaN are presented. It is shown that fitting the collection efficiency dependence on beam energy is the most reliable method for this purpose....

  • Low-energy electron-beam irradiation and yellow luminescence in activated Mg-doped GaN. Geihausen, 0.; Kieinz, H. N.; Phillips, M. R.; Goldys, F. M. // Applied Physics Letters;10/20/2003, Vol. 83 Issue 16, p3293 

    The effect of low-energy electron-beam irradiation (LEEBI) on native defects and residual impurities in metalorganic-vapor-phase-epitaxy-grown, lightly Mg-doped, p-type GaN was studied by temperature-resolved and excitation power density-resolved cathodoluminescence spectroscopy. Following the...

  • Thickness-related features observed in GaN epitaxial layers. Castaldini, A.; Cavallini, A.; Polenta, L. // Applied Physics Letters;6/14/2004, Vol. 84 Issue 24, p4851 

    Electrical properties of gallium nitride (GaN) epitaxially grown on sapphire show significant dependence on layer thickness. In this letter we show some of the main features observed by spectral photoconductivity (PC), electron beam induced current, and current–voltage characteristics. We...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics